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Akira Nishiyama
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2020 – today
- 2023
- [j10]Akira Nishiyama, Shun Kayashima, Nobuyuki Sumi, Takashi Hashimoto, Takeyuki Abe, Jun'ichi Kaneko:
Process Planning with Removal of Melting Penetration and Temper Colors in 5-Axis Hybrid Additive and Subtractive Manufacturing. Int. J. Autom. Technol. 17(4): 356-368 (2023) - 2021
- [c4]Kosuke Nogo, Kou Ikejima, Wei Qi, Tomoya Kitazaki, Hiroshi Kanasaki, Kazushi Hamada, Kenji Wada, Akira Nishiyama, Ichiro Ishimaru:
Infrared Emission Spectroscopic Imaging of Microplastics Using Long-Wavelength Infrared Hyperspectral Camera with Imaging-Type Two-Dimensional Fourier Spectroscopy. WHISPERS 2021: 1-5
2010 – 2019
- 2015
- [j9]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015) - [j8]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015) - 2014
- [j7]Alexei A. Sharov, Akira Nishiyama, Yong Qian, Dawood B. Dudekula, Dan L. Longo, David Schlessinger, Minoru S. H. Ko:
Chromatin Properties of Regulatory DNA Probed by Manipulation of Transcription Factors. J. Comput. Biol. 21(8): 569-577 (2014) - [j6]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014) - [j5]Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014) - 2013
- [c3]Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110 - [c2]Pradeep Kumara Wijesekara Abeygunawardhana, Satoru Suzuki, Ichirou Ishimaru, Akira Nishiyama:
Precision Controlled Variable Phase Filter for Imaging Type Two-Dimensional Spectroscopic Tomography. SocialCom 2013: 858-863 - 2012
- [j4]Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012) - [j3]M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012) - [c1]Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92 - 2011
- [j2]D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011)
1980 – 1989
- 1988
- [j1]Yukihiro Ushiku, Teruo Kobayashi, Akito Yoshida, Nobuyuki Itoh, Akira Nishiyama, Rempei Nakata:
An optimized 1.0- mu m CMOS technology for next-generation channelless gate arrays. IEEE J. Solid State Circuits 23(2): 507-513 (1988)
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