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Tadahiko Horiuchi
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2000 – 2009
- 2002
- [j6]Shinya Ito, Hiroaki Namba, Tsuyoshi Hirata, Koichi Ando, Shin Koyama, Nobuyuki Ikezawa, Tatsuya Suzuki, Takehiro Saitoh, Tadahiko Horiuchi:
Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance. Microelectron. Reliab. 42(2): 201-209 (2002) - 2001
- [j5]Kenji Noda, Koichi Takeda, Koujirou Matsui, Shinya Ito, Sadaaki Masuoka, Hideaki Kawamoto, Nobuyuki Ikezawa, Yoshiharu Aimoto, Noritsugu Nakamura, Takahiro Iwasaki, Hideo Toyoshima, Tadahiko Horiuchi:
An ultrahigh-density high-speed loadless four-transistor SRAM macro with twisted bitline architecture and triple-well shield. IEEE J. Solid State Circuits 36(3): 510-515 (2001) - [c2]Koichiro Minami, Muneo Fukaishi, Masayuki Mizuno, Hideaki Onishi, Kenji Noda, Kiyotaka Imai, Tadahiko Horiuchi, Hiroshi Yamaguchi, Takanori Sato, Kazuyuki Nakamura, Masakazu Yaniashina:
A 0.10 μm CMOS, 1.2 V, 2 GHz phase-locked loop with gain compensation VCO. CICC 2001: 213-216 - 2000
- [j4]Koichi Takeda, Yoshiharu Aimoto, Noritsugu Nakamura, Hideo Toyoshima, Takahiro Iwasaki, Kenji Noda, Koujirou Matsui, Shinya Itoh, Sadaaki Masuoka, Tadahiko Horiuchi, Atsushi Nakagawa, Kenju Shimogawa, Hiroyuki Takahashi:
A 16-Mb 400-MHz loadless CMOS four-transistor SRAM macro. IEEE J. Solid State Circuits 35(11): 1631-1640 (2000) - [c1]Kenji Noda, Koujirou Matsui, Shinya Ito, Sadaaki Masuoka, Hiroyuki Kawamoto, Nobuyuki Ikezawa, Koichi Takeda, Yoshiharu Aimoto, Naoto Nakamura, Hideo Toyoshima, Takahiro Iwasaki, Tadahiko Horiuchi:
An ultra-high-density high-speed loadless four-transistor SRAM macro with a dual-layered twisted bit-line and a triple-well shield. CICC 2000: 283-286
1990 – 1999
- 1997
- [j3]Masanori Izumikawa, Hiroyuki Igura, Hitoshi Wakabayashi, Ken Nakajima, Tohru Mogami, Tadahiko Horiuchi, Masakazu Yamashina:
A 0.25-μm CMOS 0.9-V 100-MHz DSP core. IEEE J. Solid State Circuits 32(1): 52-61 (1997) - 1996
- [j2]Tomofumi lima, Masayuki Mizuno, Tadahiko Horiuchi, Masakazu Yamashina:
Capacitance coupling immune, transient sensitive accelerator for resistive interconnect signals of subquarter micron ULSI. IEEE J. Solid State Circuits 31(4): 531-536 (1996) - 1994
- [j1]Masahiro Nomura, Masakazu Yamashina, Junichi Goto, Toshiaki Inoue, Kazumasa Suzuki, Masato Motomura, Youichi Koseki, Benjamin S. Shih, Tadahiko Horiuchi, Nobuhisa Hamatake, Kouichi Kumagai, Tadayoshi Enomoto, Hachiro Yamada:
A 300-MHz 16-b 0.5-μm BiCMOS digital signal processor core LSI. IEEE J. Solid State Circuits 29(3): 290-297 (1994)
Coauthor Index
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