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ORCIDMasanori Tsukuda
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2010 – 2019
- 2019
[c1]Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa:
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON 2019: 1-3- 2018
- [j14]Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura:
Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena. Microelectron. Reliab. 88-90: 482-485 (2018) - [j13]Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa
, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura:
Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system. Microelectron. Reliab. 88-90: 500-504 (2018) - [j12]Ravi N. Tripathi, Masanori Tsukuda, Ichiro Omura:
A fully digital feedback control of gate driver for current balancing of parallel connected power devices. Microelectron. Reliab. 88-90: 505-509 (2018) - 2017
- [j11]Seiya Abe, Kazunori Hasegawa, Masanori Tsukuda, Keiji Wada, Ichiro Omura, Tamotsu Ninomiya:
Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications. Microelectron. Reliab. 76-77: 465-469 (2017) - [j10]Masanori Tsukuda, K. Nakashima, S. Tabata, Kazunori Hasegawa, Ichiro Omura:
Clamp type built-in current sensor using PCB in high-voltage power modules. Microelectron. Reliab. 76-77: 517-521 (2017) - 2016
- [j9]Masanori Tsukuda, Masahiro Koga, Kenta Nakashima, Ichiro Omura:
Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules. Microelectron. Reliab. 64: 479-483 (2016) - 2015
- [j8]H. Tomonaga, Masanori Tsukuda, S. Okoda, R. Noda, K. Tashiro, Ichiro Omura:
16-Channel micro magnetic flux sensor array for IGBT current distribution measurement. Microelectron. Reliab. 55(9-10): 1357-1362 (2015) - [j7]Masanori Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, Ichiro Omura:
High-throughput and full automatic DBC-module screening tester for high power IGBT. Microelectron. Reliab. 55(9-10): 1363-1368 (2015) - [j6]Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura:
Failure analysis of power devices based on real-time monitoring. Microelectron. Reliab. 55(9-10): 2032-2035 (2015) - 2014
- [j5]Junpei Takaishi, Syohei Harada, Masanori Tsukuda, Ichiro Omura:
Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II. Microelectron. Reliab. 54(9-10): 1891-1896 (2014) - [j4]Kazunori Hasegawa, Kenichi Yamamoto, Hidetaro Yoshida, Kota Hamada, Masanori Tsukuda, Ichiro Omura:
Short-circuit protection for an IGBT with detecting the gate voltage and gate charge. Microelectron. Reliab. 54(9-10): 1897-1900 (2014) - 2013
- [j3]Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura:
Real time degradation monitoring system for high power IGBT module under power cycling test. Microelectron. Reliab. 53(9-11): 1692-1696 (2013) - 2011
- [j2]Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura:
Tiny-scale "stealth" current sensor to probe power semiconductor device failure. Microelectron. Reliab. 51(9-11): 1689-1692 (2011) - [j1]Masanori Tsukuda, Keiichiro Kawakami, Kenichi Takahama, Ichiro Omura:
"Design for EMI" approach on power PiN diode reverse recovery. Microelectron. Reliab. 51(9-11): 1972-1975 (2011)
Coauthor Index
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