"Modelling of the shoot-through phenomenon introduced by the next ..."

Seiya Abe et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.087

access: closed

type: Journal Article

metadata version: 2020-02-22

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Seiya Abe, Kazunori Hasegawa, Masanori Tsukuda, Keiji Wada, Ichiro Omura, Tamotsu Ninomiya:
Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications. Microelectron. Reliab. 76-77: 465-469 (2017)

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