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2020 – today
- 2022
[j13]Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor
:
CacheEM: For Reliability Analysis on Cache Memory Aging Due to Electromigration. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(9): 3078-3091 (2022)- 2021
- [j12]Rui Zhang, Kexin Yang, Zhaocheng Liu, Taizhi Liu, Wenshan Cai, Linda Milor:
A Comprehensive Framework for Analysis of Time-Dependent Performance-Reliability Degradation of SRAM Cache Memory. IEEE Trans. Very Large Scale Integr. Syst. 29(5): 857-870 (2021) - 2020
- [j11]Rui Zhang, Taizhi Liu, Kexin Yang, Chang-Chih Chen, Linda Milor:
SRAM Stability Analysis and Performance-Reliability Tradeoff for Different Cache Configurations. IEEE Trans. Very Large Scale Integr. Syst. 28(3): 620-633 (2020) - [c10]Rui Zhang, Zhaocheng Liu, Kexin Yang, Taizhi Liu, Wenshan Cai, Linda Milor:
Inverse Design of FinFET SRAM Cells. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c9]Rui Zhang, Kexin Yang, Taizhi Liu, Linda Milor:
Impact of Front-End Wearout Mechanisms on the Performance of a Ring Oscillator-Based Thermal Sensor. IWASI 2019: 258-263 - 2018
- [j10]Taizhi Liu, Chang-Chih Chen, Linda Milor:
Comprehensive Reliability-Aware Statistical Timing Analysis Using a Unified Gate-Delay Model for Microprocessors. IEEE Trans. Emerg. Top. Comput. 6(2): 219-232 (2018) - [j9]Kexin Yang, Taizhi Liu, Rui Zhang, Linda Milor:
A Comprehensive Time-Dependent Dielectric Breakdown Lifetime Simulator for Both Traditional CMOS and FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 26(11): 2470-2482 (2018) - [c8]Kexin Yang, Rui Zhang, Taizhi Liu, Dae Hyun Kim, Linda Milor:
Optimal Accelerated Test Regions for Time- Dependent Dielectric Breakdown Lifetime Parameters Estimation in FinFET Technology. DCIS 2018: 1-6 - [c7]Rui Zhang, Kexin Yang, Taizhi Liu, Linda Milor:
Estimation of the Optimal Accelerated Test Region for FinFET SRAMs Degraded by Front-End and Back-End Wearout Mechanisms. DCIS 2018: 1-6 - [c6]Kexin Yang, Taizhi Liu, Rui Zhang, Linda Milor:
Circuit-level reliability simulator for front-end-of-line and middle-of-line time-dependent dielectric breakdown in FinFET technology. VTS 2018: 1-6 - 2017
- [j8]Kexin Yang, Taizhi Liu, Rui Zhang, Dae Hyun Kim, Linda Milor:
Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits. Microelectron. Reliab. 76-77: 81-86 (2017) - [j7]Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor:
Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations. Microelectron. Reliab. 76-77: 87-91 (2017) - [j6]Soonyoung Cha, Taizhi Liu, Linda Milor:
Negative Bias Temperature Instability and Gate Oxide Breakdown Modeling in Circuits With Die-to-Die Calibration Through Power Supply and Ground Signal Measurements. IEEE Trans. Very Large Scale Integr. Syst. 25(8): 2271-2284 (2017) - [c5]Woongrae Kim, Taizhi Liu, Linda Milor:
On-line monitoring of system health using on-chip SRAMs as a wearout sensor. IOLTS 2017: 253-258 - 2016
- [j5]Chang-Chih Chen, Taizhi Liu, Linda Milor:
System-Level Modeling of Microprocessor Reliability Degradation Due to Bias Temperature Instability and Hot Carrier Injection. IEEE Trans. Very Large Scale Integr. Syst. 24(8): 2712-2725 (2016) - [c4]Taizhi Liu, Chang-Chih Chen, Jiadong Wu, Linda S. Milor:
SRAM stability analysis for different cache configurations due to Bias Temperature Instability and Hot Carrier Injection. ICCD 2016: 225-232 - 2015
- [j4]Chang-Chih Chen, Taizhi Liu, Soonyoung Cha, Linda S. Milor:
Processor-level reliability simulator for time-dependent gate dielectric breakdown. Microprocess. Microsystems 39(8): 950-960 (2015) - [j3]Taizhi Liu, Chang-Chih Chen, Woongrae Kim, Linda Milor:
Comprehensive reliability and aging analysis on SRAMs within microprocessor systems. Microelectron. Reliab. 55(9-10): 1290-1296 (2015) - [j2]Taizhi Liu, Chang-Chih Chen, Soonyoung Cha, Linda Milor:
System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown. Microelectron. Reliab. 55(9-10): 1334-1340 (2015) - [j1]Soonyoung Cha, Dae Hyun Kim, Taizhi Liu, Linda S. Milor:
The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system. Microelectron. Reliab. 55(9-10): 1404-1411 (2015) - [c3]Taizhi Liu, Chang-Chih Chen, Linda S. Milor:
Accurate standard cell characterization and statistical timing analysis using multivariate adaptive regression splines. ISQED 2015: 272-279 - [c2]Woongrae Kim, Chang-Chih Chen, Taizhi Liu, Soonyoung Cha, Linda Milor:
Estimation of remaining life using embedded SRAM for wearout parameter extraction. IWASI 2015: 243-248 - 2014
- [c1]Soonyoung Cha, Chang-Chih Chen, Taizhi Liu, Linda S. Milor:
Extraction of threshold voltage degradation modeling due to Negative Bias Temperature Instability in circuits with I/O measurements. VTS 2014: 1-6
Coauthor Index
aka: Linda Milor
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