- 2024
- Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger:
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. BCICTS 2024: 13-17 - Johan Alant, Ryan Fang, Yuxuan Zhang, Pilsoon Choi, Yijing Feng, Jessica Chong, Zev Pogrebin, Bin Lu, Ujwal Radhakrishna, Lan Wei:
Physics-Based Compact Model for GaN-Based Non-linear Transmission Line Resistors. BCICTS 2024: 46-49 - Amirreza Alizadeh, Kwangwon Park, Saleh Hassanzadehyamchi, Utku Soylu, Miguel E. Urtega, Mark J. W. Rodwell:
A Low-Noise Amplifier in 130-nm InP HBT with 15.5 dB Gain and Record 5.3 dB Noise-Figure at 212 GHz. BCICTS 2024: 158-161 - Ankita Ankita, Mihilat Manahile, Shih-Chun Tsu, Ali Ebadi Yekta, Terry Alford, Stephen M. Goodnick, Robert J. Nemanich, Trevor J. Thornton:
Diamond-BN Heterojunctions for High Power Devices: The Ultimate HEMT? BCICTS 2024: 237-242 - Shah Zaib Aslam, Najme Ebrahimi:
A 10 Gb/s, 120 GHz Compact and Energy-Efficient Harmonic-OOK Modulator using 90 nm SiGe BiCMOS. BCICTS 2024: 217-220 - Samuel James Bader, Ahmad Zubair, Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif, Dimitri Frolov, Kaushik Narayanan, Jag Rangaswamy, Puneet Kanwar Kaur, Sanjeev Kumar, Nirmal Kundu, Shreyas Samraksh Jayaprakash, Abhijeet Khobragade, Yashwanth Pathivada, Qiang Yu, Jagannathan Vasudevan, Ibukun Momson, Said Rami, Heli Vora, Marko Radosavljevic, Pratik Koirala, Michael Beumer, Andrey Vyatskikh, Paul Nordeen, Thomas Hoff, Nachiket V. Desai, Han Wui Then:
Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS. BCICTS 2024: 5-8 - Ivan Berdalovic, Dario Novakovic, Tomislav Suligoj:
Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers. BCICTS 2024: 9-12 - Filip Bogdanovic, Lovro Markovic, Azra Tabakovic, Josip Zilak, Marko Koricic, Tomislav Suligoj:
The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor's (HCBT) Beta Recovery at Cryogenic Temperatures. BCICTS 2024: 282-285 - Christian Bredendiek, Jan Wessel, Klaus Aufinger, Nils Pohl:
A Ku-Band SiGe: C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAE. BCICTS 2024: 115-118 - Eric W. Bryerton, Jeffrey L. Hesler:
Trends in Millimeter-Wave and THz Test Equipment. BCICTS 2024: 193-198 - Steven Callender, Abhishek Agrawal, Amy Whitcombe, Stefano Pellerano:
D-Band meets FinFET: Fully-Integrated Transmitter and Receiver Architectures for 100+Gb/s Links. BCICTS 2024: 229-236 - Christopher Chen, Yan Zhang, Hao-Yu Chien, Jiazhang Song, Jia Zhou, Chao-Jen Tien, Sudhakar Pamarti, Chih-Kong Ken Yang, Mau-Chung Frank Chang:
A Sub-Sampling 35GHz PLL in 45nm PDSOI BiCMOS with 37fs Integrated Jitter and a FoM of -252dB. BCICTS 2024: 203-206 - X. Chen, A. Mistry, A. El Sayed, C. Williams, Lorenzo Iotti, A. Atef, Kishore Padmaraju, M. Malinowski, D. Che, Rafid A. Sukkar, Rick Younce, Alexandre Horth, Yury Dziashko, H. Guan, R. Shi, D. Gill, A. Seyoum, C. Marsh, M. Schmidt, G. Burrell, J. Basak, D. Chapman, A. Mikami, Alexander V. Rylyakov, A. Leven, Nicolas A. F. Jaeger:
802 Gbps Coherent Optical Sub-Assembly (COSA) based on a Coupling Modulated Silicon Ring Resonator. BCICTS 2024: 95-98 - Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, G. Bonomo, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
High-Temperature Stability Base Ohmic Contacts for InP/GaAsSb DHBTs. BCICTS 2024: 84-87 - Adam W. DiVergilio:
Practical Simulation and Test Strategies for Advanced Heterojunction Bipolar Transistors. BCICTS 2024: 22-25 - Dimitre Dimitrov, Mark D. Hickle, Matthew Speir, Joseph M. Krzyzek, Daniel P. Lacroix, Shail Srinivas, Robert Sepanek, Spencer Desrochers, Steven Eugene Turner:
Single-Chip 30 GHz SiGe Sub-Sampling PLL with 28.3 fs Jitter. BCICTS 2024: 266-269 - David Dolt, Mingi Yeo, David Reents, Will Gouty, Tony Quach, Samuel Palermo:
The Design of Wideband LNAs in 45nm SiGe BiCMOS. BCICTS 2024: 142-145 - Larry Dunleavy, Jiang Liu, Hugo Morales:
Practical Dimensions of Contemporary GaN Modeling. BCICTS 2024: 70-75 - Paul Shine Eugine, Peter Toth, Kaoru Yamashita, Sebastian Halama, Christian Ospelkaus, Hiroki Ishikuro, Vadim Issakov:
A Direct Digital Synthesizer-Based Arbitrary Waveform Generator for Envelope Modulation in Trapped-Ion Quantum Computer Operating at 4K. BCICTS 2024: 50-53 - Evgenii Fedorov, Vadim Issakov:
A compact low-loss Ku-Band 90° Hybrid Coupler for Front-End Modules in 45 nm SOI CMOS. BCICTS 2024: 111-114 - Pingzhu Gong, Jiachen Guo, Kenle Chen:
Load-Modulated Balanced Amplifiers for Next-G Wireless Communications. BCICTS 2024: 254-257 - Bernhard Grote, David Yu-Ting Wu, Bruce Green, Raphael Holin, David Burdeaux, Philippe Renaud, Humayun Kabir, Patrick Hu:
Advances in GaN HEMT and GaN Power Amplifier Techniques for Base-Stations. BCICTS 2024: 243-249 - Haidong Guo, Suprovo Ghosh, Frank Zhang, Suhwan Lee, Wooyeol Choi, Shenggang Dong, O. Kenneth:
10-GSymbols/s Supply Modulated 250-GHz SiGe HBT Transmitter RF Front-End with 6.8-dBm Peak Modulated Power. BCICTS 2024: 181-184 - Zhaoqun Guo, Alexander Meyer, Adilet Dossanov, Paul Julius Ritter, Marius Neumann, Jens Repp, Matthias Brandl, Meinhard Schilling, Vadim Issakov:
A Low-Power, High-Swing LDMOS Driver Amplifier for Shuttling Controller in a Trapped-Ion Quantum Computer Operating at 4 K. BCICTS 2024: 54-57 - Hiroshi Hamada, Ibrahim Abdo, Takuya Tsutsumi, Hiroyuki Takahashi:
300-GHz 160-Gb/s InP-HEMT Wireless Front-End With Fully Differential Architecture. BCICTS 2024: 162-165 - Justin P. Heimerl, Jeffrey W. Teng, Harrison P. Lee, Delgermaa Nergui, Jackson P. Moody, John D. Cressler:
TCAD-Based Design of SiGe HBT Germanium Profiles via Bayesian Optimization. BCICTS 2024: 278-281 - Arno Hemelhof, Sehoon Park, Yang Zhang, Mark Ingels, Giuseppe Gramegna, Kristof Vaesen, Dongyang Yan, Piet Wambacq:
A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology. BCICTS 2024: 185-188 - Thiemo Herbel, Mohsin Tarar, Frank Vater, Dietmar Kissinger:
A 130-GHz Bandwidth 61-dBOhm Variable-Gain Differential Linear TIA in a 130-nm SiGe: C BiCMOS Technology. BCICTS 2024: 130-133 - Mozhgan Hosseinzadeh, Milad Frounchi, George N. Tzintzarov, Jeffrey W. Teng, John D. Cressler:
High-Performance SiGe Heterojunction Phototransistor in a Commercial SiGe BiCMOS Platform for Free-Space Optical Receivers. BCICTS 2024: 18-21 - Dimitris P. Ioannou, Adam W. DiVergilio:
High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs. BCICTS 2024: 270-273
