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Jan Wessel
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2020 – today
- 2024
- [c12]Christian Bredendiek, Jan Wessel, Klaus Aufinger, Nils Pohl:
A Ku-Band SiGe: C Power Amplifier with 24.8 dBm Output Power and 35.6% Peak PAE. BCICTS 2024: 115-118 - 2021
- [c11]Wael A. Ahmad, Arzu Ergintav, Jan Wessel, Dietmar Kissinger, Herman Jalli Ng:
Experimental Evaluation of Millimeter-Wave FMCW Radar Ranging Precision. RWS 2021: 70-72 - 2020
- [c10]Wael A. Ahmad, Jan Wessel, Herman Jalli Ng, Dietmar Kissinger:
IoT-Ready Millimeter-Wave Radar Sensors. GCAIoT 2020: 1-5
2010 – 2019
- 2019
- [j1]Vincent Lammert, Carl Heine, Jan Wessel, Farabi Ibne Jamal, Dietmar Kissinger, Angelika Geiselbrechtinger, Vadim Issakov:
A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS. IEEE Trans. Circuits Syst. II Express Briefs 66-II(10): 1628-1632 (2019) - [c9]Rahul Kumar Yadav, Jan Wessel, Dietmar Kissinger:
A 60 GHz Ring Sensor with Differential Feed-lines for Dielectric Spectroscopy in Biomedical Applications. RWS 2019: 1-3 - 2018
- [c8]Miljana Nenadovic, Norbert Fiebig, Gunter Fischer, Jan Wessel, Dietmar Kissinger:
A Low-Power Injection-Locked VCO for an Implantable MICS Band Transmitter with Wireless Frequency Reference and Tune-while-Lock Channel Calibration. EMBC 2018: 2993-2996 - [c7]Jan Wessel, Klaus Schmalz, Farabi Ibne Jamal, Dietmar Kissinger:
Contactless Investigation of Dielectric Samples with a High-Q Millimeter-Wave Sensor. EMBC 2018: 5926-5929 - [c6]Rahul Kumar Yadav, Jan Wessel, Mohamed Hussein Eissa, Farabi Ibne Jamal, Maciej Kucharski, Dietmar Kissinger:
A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy. ISCAS 2018: 1-4 - [c5]Miljana Nenadovic, Norbert Fiebig, Gunter Fischer, Dietmar Kissinger, Jan Wessel:
A 0.48 mW fully integrated MICS band VCO in SiGe BiCMOS technology for medical implant communication. RWS 2018: 1-3 - [c4]Jan Wessel, Klaus Schmalz, Johann-Christoph Scheytt, Dietmar Kissinger:
Sensitive permittivity detector for dielectric samples at 120 GHz. RWS 2018: 136-138 - 2017
- [c3]Rahul Kumar Yadav, Farabi Ibne Jamal, Mohamed Eissa, Jan Wessel, Dietmar Kissinger:
A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy. NEWCAS 2017: 285-288 - [c2]Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel:
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS 2017: 94-97 - 2013
- [c1]Jan Wessel, Klaus Schmalz, Brian P. Cahill, Gunter Gastrock, Chafik Meliani:
Contactless characterization of yeast cell cultivation at 7 GHz and 240 GHz. RWS 2013: 247-249
Coauthor Index
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