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2020 – today
- 2023
[j18]Jingyu Li
, Hao Yuan, Boyi Bai, Xiaoyan Tang, Lejia Sun, Shaohui Zhou, Yimen Zhang, Qingwen Song, Yuming Zhang:
Analytical model and optimization strategy for SiC floating junction JBS diodes. Microelectron. J. 137: 105800 (2023)- [j17]Wenbo Guan, Xiaoyan Tang, Hongliang Lu, Yuming Zhang, Yimen Zhang:
A Novel Thermal-Aware Floorplanning and TSV Assignment With Game Theory for Fixed-Outline 3-D ICs. IEEE Trans. Very Large Scale Integr. Syst. 31(11): 1639-1652 (2023) - [j16]Wenbo Guan, Xiaoyan Tang, Hongliang Lu, Yuming Zhang, Yimen Zhang:
Thermal-Aware Fixed-Outline 3-D IC Floorplanning: An End-to-End Learning-Based Approach. IEEE Trans. Very Large Scale Integr. Syst. 31(12): 1882-1895 (2023) - [j15]Wenbo Guan, Xiaoyan Tang, Hongliang Lu, Yuming Zhang, Yimen Zhang:
ATT-TA: A Cooperative Multiagent Deep Reinforcement Learning Approach for TSV Assignment in 3-D ICs. IEEE Trans. Very Large Scale Integr. Syst. 31(12): 1905-1917 (2023) - 2022
- [j14]Lin Cheng, Hongliang Lu, Minjie Xia, Wei Cheng, Yuming Zhang, Yimen Zhang:
An augmented small-signal model of InP HBT with its analytical-based parameter extraction technique. Microelectron. J. 121: 105366 (2022) - [j13]Silu Yan, Hongliang Lu, Junjun Qi, Wei Cheng, Yuming Zhang, Yimen Zhang:
Temperature-dependent DC and small signal performance of InGaAs/InP DHBT. Microelectron. J. 125: 105473 (2022) - 2021
- [c3]Yi Zhu, Hongliang Lv, Yuming Zhang, Yimen Zhang, Zhijun Lyu, Jiale Sun:
Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons. ICTA 2021: 47-48 - 2020
- [j12]Hao Yuan, Chengsen Wang, XiaoYan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu:
Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes. IEEE Access 8: 93039-93047 (2020) - [j11]Dongxun Li, Yuming Zhang, XiaoYan Tang, Yanjing He, Qingwen Song, Yimen Zhang:
Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics. IEEE Access 8: 104503-104510 (2020)
2010 – 2019
- 2019
- [c2]Shixing Qiao, Hongliang Lv, Yuming Zhang, Yimen Zhang, Peng Ding:
An Improved InP HEMT Small Signal Model with RC Network. ASICON 2019: 1-4 - 2018
- [j10]Shaojun Li, HongLiang Lv, Yimen Zhang, Yuming Zhang, Yansong Zhang, Muhammad Asif:
A broadband high efficiency monolithic power amplifier with GaAs HBT. IEICE Electron. Express 15(10): 20180245 (2018) - [j9]Shaojun Li, HongLiang Lv, Yimen Zhang, Yuming Zhang, Yue Wu, Muhammad Asif:
A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology. IEICE Electron. Express 15(23): 20180946 (2018) - [j8]Yue Wu, HongLiang Lv, Yuming Zhang, Yimen Zhang, Shaojun Li:
Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT. J. Circuits Syst. Comput. 27(3): 1850039:1-1850039:13 (2018) - 2017
- [j7]Xiao-Hong Zhao, Hong-Liang Lu, Yu-Ming Zhang, Yimen Zhang:
Model of phonon contribution to nonionizing energy loss (NIEL) for InP/InGaAs heterojunction. Microelectron. Reliab. 78: 156-160 (2017) - [j6]Bin Lu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Xiaoran Cui, Chengji Jin, Chen Liu:
Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs. Microelectron. Reliab. 79: 231-238 (2017) - 2016
- [j5]Jincan Zhang, Yuming Zhang, Hongliang Lu, Yimen Zhang, Bo Liu, Leiming Zhang, Jinchan Wang, Liwen Zhang:
A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology. J. Circuits Syst. Comput. 25(6): 1650053:1-1650053:10 (2016) - 2015
- [c1]Chengsen Wang, Hao Yuan, Qingwen Song, XiaoYan Tang, Renxu Jia, Yuming Zhang, Yimen Zhang, Yidong Shen:
Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes. ASICON 2015: 1-3 - 2012
- [j4]Jincan Zhang, Yuming Zhang, HongLiang Lv, Yimen Zhang, Shi Yang:
The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors. Microelectron. Reliab. 52(12): 2941-2947 (2012) - 2011
- [j3]Ping Cheng, Yuming Zhang, Yimen Zhang:
Characteristics of the intrinsic defects in unintentionally doped 4H-SiC after thermal annealing. Microelectron. Reliab. 51(3): 572-575 (2011)
2000 – 2009
- 2008
- [j2]QuanJun Cao, Yimen Zhang, Yuming Zhang, HongLiang Lv, YueHu Wang, XiaoYan Tang, Hui Guo:
Improved empirical DC I-V model for 4H-SiC MESFETs. Sci. China Ser. F Inf. Sci. 51(8): 1184-1192 (2008) - [j1]Haohang Su, Yimen Zhang, Yuming Zhang, Jincai Man:
Power Grids Analysis in Compressed Krylov-Subspace Methods. J. Circuits Syst. Comput. 17(3): 439-446 (2008)
Coauthor Index
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