"Improved empirical DC I-V model for 4H-SiC MESFETs."

QuanJun Cao et al. (2008)

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DOI: 10.1007/S11432-008-0037-X

access: closed

type: Journal Article

metadata version: 2020-05-18

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  - https://dblp.org/rec/journals/chinaf/CaoZZLWTG08
QuanJun Cao, Yimen Zhang, Yuming Zhang, HongLiang Lv, YueHu Wang, XiaoYan Tang, Hui Guo:
Improved empirical DC I-V model for 4H-SiC MESFETs. Sci. China Ser. F Inf. Sci. 51(8): 1184-1192 (2008)

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