"Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes."

Chengsen Wang et al. (2015)

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DOI: 10.1109/ASICON.2015.7517153

access: closed

type: Conference or Workshop Paper

metadata version: 2018-07-17

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Chengsen Wang, Hao Yuan, Qingwen Song, XiaoYan Tang, Renxu Jia, Yuming Zhang, Yimen Zhang, Yidong Shen:
Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes. ASICON 2015: 1-3

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