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ORCIDElena Atanassova
Person information
- affiliation: Bulgarian Academy of Sciences, Sofia, Bulgaria
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Journal Articles
- 2014
[j12]Elena Atanassova, Nenad Novkovski
, D. Spassov, Albena Paskaleva, Aleksandar Skeparovski:
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack. Microelectron. Reliab. 54(2): 381-387 (2014)- 2012
- [j11]Elena Atanassova, Albena Paskaleva, D. Spassov:
Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. Microelectron. Reliab. 52(4): 642-650 (2012) - 2011
- [j10]D. Spassov, Elena Atanassova, Albena Paskaleva:
Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity. Microelectron. Reliab. 51(12): 2102-2109 (2011) - 2010
- [j9]Elena Atanassova, Nenad Novkovski, Albena Paskaleva, D. Spassov:
Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. Microelectron. Reliab. 50(6): 794-800 (2010) - 2008
- [j8]Elena Atanassova, Albena Paskaleva, Nenad Novkovski:
Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks. Microelectron. Reliab. 48(4): 514-525 (2008) - [j7]Elena Atanassova, Ninoslav Stojadinovic, Albena Paskaleva:
Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode. Microelectron. Reliab. 48(8-9): 1193-1197 (2008) - 2007
- [j6]Elena Atanassova, Albena Paskaleva:
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectron. Reliab. 47(6): 913-923 (2007) - [j5]Elena Atanassova, D. Spassov, Albena Paskaleva:
Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. Microelectron. Reliab. 47(12): 2088-2093 (2007) - 2005
- [j4]Elena Atanassova, Raisa V. Konakova, Vadym Fedorovych Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska:
Effect of microwave radiation on the properties of Ta2O5-Si microstructures. Microelectron. Reliab. 45(1): 123-135 (2005) - 2003
- [j3]M. Pecovska-Gjorgjevich, Nenad Novkovski, Elena Atanassova:
Electrical properties of thin RF sputtered Ta2O5 films after constant current stress. Microelectron. Reliab. 43(2): 235-241 (2003) - 2002
- [j2]Elena Atanassova, Albena Paskaleva:
Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. Microelectron. Reliab. 42(2): 157-173 (2002) - [j1]Elena Atanassova, Dejan Spasov:
Thermal Ta2O5--alternative to SiO2 for storage capacitor application. Microelectron. Reliab. 42(8): 1171-1177 (2002)
Coauthor Index
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