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2020 – today
- 2023
[c15]J. Tan, J. H. Lim, Jae Hyun Kwon, Vinayak Bharat Naik, Nagarajan Raghavan, Kin Leong Pey:
Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation. IRPS 2023: 1-6- [c14]Tiang Teck Tan, Yu-Yun Wang, Joel Tan, Tian-Li Wu, Nagarajan Raghavan, Kin Leong Pey:
A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices. IRPS 2023: 1-7 - 2020
- [c13]Kin Leong Pey
, Lucienne Blessing, Bige Tunçer:
A transformative engineering and architecture education. FIE 2020: 1-4 - [c12]Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey:
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. IRPS 2020: 1-7 - [c11]Jia Hao Lim, Nagarajan Raghavan, Jae Hyun Kwon, Tae Young Lee, Robin Chao, Nyuk Leong Chung, Kazutaka Yamane, Naganivetha Thiyagarajah, Vinayak Bharat Naik, Kin Leong Pey:
Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM. IRPS 2020: 1-5 - [c10]Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey:
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. IRPS 2020: 1-6
2010 – 2019
- 2019
- [c9]Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo:
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS 2019: 1-8 - [c8]Jia Hao Lim, Nagarajan Raghavan, Vinayak Bharat Naik, Jae Hyun Kwon, Kazutaka Yamane, H. Yang, K. H. Lee, Kin Leong Pey:
Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions. IRPS 2019: 1-7 - [c7]Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea:
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns. IRPS 2019: 1-12 - 2018
- [j19]Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong:
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. Microelectron. Reliab. 88-90: 164-168 (2018) - [j18]Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang:
Understanding spatial resolution of laser voltage imaging. Microelectron. Reliab. 88-90: 255-261 (2018) - [c6]Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey:
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. IRPS 2018: 4 - [c5]Jia Hao Lim, Nagarajan Raghavan, Sen Mei, Vinayak Bharat Naik, Jae Hyun Kwon, S. M. Noh, B. Liu, E. H. Toh, Nyuk Leong Chung, Robin Chao, K. H. Lee, Kin Leong Pey:
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction. IRPS 2018: 6 - [c4]Oka Kurniawan, Norman Tiong Seng Lee, Subhajit Datta, Nachamma Sockalingam, Kin Leong Pey:
Effectiveness of Physical Robot Versus Robot Simulator in Teaching Introductory Programming. TALE 2018: 486-493 - 2017
- [c3]U-Xuan Tan, Yajuan Zhu, Chee Huei Lee, Tin-Lam Toh, Guan Kheng Sze, Shirley Tay, Darren Wong, Kin Leong Pey:
Preliminary study of integrated physics and mathematics bridging course. EDUCON 2017: 1146-1151 - 2016
- [j17]Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey:
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices. Microelectron. Reliab. 61: 71-77 (2016) - [j16]Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau:
Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack. Microelectron. Reliab. 61: 78-81 (2016) - [j15]Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey:
The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode. Microelectron. Reliab. 61: 95-98 (2016) - [j14]Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey:
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. Microelectron. Reliab. 64: 172-178 (2016) - [j13]Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. Microelectron. Reliab. 64: 204-209 (2016) - 2015
- [j12]Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory. Microelectron. Reliab. 55(9-10): 1412-1416 (2015) - [j11]Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey:
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach. Microelectron. Reliab. 55(9-10): 1422-1426 (2015) - [j10]Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Microelectron. Reliab. 55(9-10): 1450-1455 (2015) - [c2]Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer. IRPS 2015: 5 - [c1]Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey:
Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM. IRPS 2015: 5 - 2014
- [j9]Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar:
High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact. Microelectron. Reliab. 54(5): 847-860 (2014) - [j8]Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey:
Robust Electromigration reliability through engineering optimization. Microelectron. Reliab. 54(9-10): 1666-1670 (2014) - [j7]Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey:
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer. Microelectron. Reliab. 54(9-10): 1712-1717 (2014) - [j6]Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey:
Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory. Microelectron. Reliab. 54(9-10): 1729-1734 (2014) - [j5]Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey:
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices. Microelectron. Reliab. 54(9-10): 2266-2271 (2014) - [j4]Nagarajan Raghavan, Michel Bosman, Kin Leong Pey:
Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective. Microelectron. Reliab. 54(9-10): 2295-2299 (2014)
2000 – 2009
- 2005
- [j3]Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang:
Structure of the oxide damage under progressive breakdown. Microelectron. Reliab. 45(5-6): 845-848 (2005) - 2003
- [j2]Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin:
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectron. Reliab. 43(9-11): 1471-1476 (2003) - 2002
- [j1]M. K. Radhakrishnan, Kin Leong Pey, C. H. Tung, W. H. Lin:
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. Microelectron. Reliab. 42(4-5): 565-571 (2002)
Coauthor Index
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