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Andrea Padovani

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2020 – today

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2024
[c23]
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  - conf/imw2/BeltrandoVKGKSKSWHKPKALP24
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Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, Nasrin Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, Jeffrey W. Anthis, Luca Larcher, Milan Pesic:
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. IMW 2024: 1-4
2023
[c22]
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  - conf/irps/PadovaniTSSML23
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Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher:
Towards a Universal Model of Dielectric Breakdown. IRPS 2023: 1-8
[c21]
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Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung-Bae Kim, Dong Kil Yim, Luca Larcher:
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. IRPS 2023: 1-8
2022
[c20]
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Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher:
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. IMW 2022: 1-4
[c19]
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Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten:
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). IRPS 2022: 3
[c18]
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Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher:
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. IRPS 2022: 4
2021
[c17]
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Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger:
Variability sources and reliability of 3D - FeFETs. IRPS 2021: 1-7

2010 – 2019

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2019
[c16]
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Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo:
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS 2019: 1-8
[c15]
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Andrea Padovani, Milan Pesic, Mondol Anik Kumar, Pieter Blomme, Alexandre Subirats, Senthil Vadakupudhupalayam, Zunaid Baten, Luca Larcher:
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. IRPS 2019: 1-8
[c14]
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Chen Wu, Adrian Vaisman Chasin, Andrea Padovani, Alicja Lesniewska, Steven Demuynck, Kris Croes:
Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects. IRPS 2019: 1-6
2018
[c13]
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Andrea Padovani, Luca Larcher:
Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach. IRPS 2018: 3
[c12]
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David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher:
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS 2018: 5
2017
[j4]
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  - journals/dt/AlayanVSPPL17
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Mouhamad Alayan, Elisa Vianello, Barbara De Salvo, Luca Perniola, Andrea Padovani, Luca Larcher:
Correlated Effects on Forming and Retention of Al Doping in HfO₂-Based RRAM. IEEE Des. Test 34(3): 23-30 (2017)
[c11]
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Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang:
A multiscale modeling approach for the simulation of OxRRAM devices. NVMTS 2017: 1-8
2016
[j3]
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Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan:
Bipolar Resistive RAM Based on HfO₂: Physics, Compact Modeling, and Variability Control. IEEE J. Emerg. Sel. Topics Circuits Syst. 6(2): 171-184 (2016)
[c10]
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Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan:
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS 2016: 128-132
[c9]
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Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan:
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS 2016: 296-300
2015
[c8]
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Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan:
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. ESSDERC 2015: 270-273
[c7]
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Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher:
A microscopic physical description of RTN current fluctuations in HfOx RRAM. IRPS 2015: 5
2014
[c6]
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Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani:
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. ESSDERC 2014: 246-249
2013
[j2]
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  - journals/mj/PadovaniLP13
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Andrea Padovani, Luca Larcher, Paolo Pavan:
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations. Microelectron. J. 44(1): 50-57 (2013)
[c5]
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Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani:
Connecting RRAM performance to the properties of the hafnia-based dielectrics. ESSDERC 2013: 163-165
[c4]
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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher:
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. ESSDERC 2013: 166-169
[c3]
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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher:
A compact model of hafnium-oxide-based resistive random access memory. ICICDT 2013: 85-88
2012
[c2]
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Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker:
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC 2012: 274-277
2010
[j1]
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  - journals/mr/LarcherP10
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Luca Larcher, Andrea Padovani:
High-kappa related reliability issues in advanced non-volatile memories. Microelectron. Reliab. 50(9-11): 1251-1258 (2010)
[c1]
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Luca Larcher, Andrea Padovani:
Fundamental reliability issues of advanced charge-trapping Flash memory devices. ICECS 2010: 1009-1012

2000 – 2009

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2009
[b1]
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Andrea Padovani:
Modeling and reliability of innovative flash memories. University of Ferrara, Italy, 2009

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