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2020 – today
- 2024
[c16]Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, Nasrin Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, Jeffrey W. Anthis, Luca Larcher, Milan Pesic:
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. IMW 2024: 1-4- [c15]Tommaso Rollo, Hansel Lo, Luca Larcher, Christopher Olsen, Milan Pesic:
Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study. IRPS 2024: 1-5 - [c14]Bastien Beltrando, Bruno Coppolelli, Jung-Bae Kim, Yang Ho Bae, Stephen Weeks, Lisa Enman, Ghazal Saheli, Davide Cornigli, Stuart Brinkley, Mark Saly, Luca Larcher, Dong Kil Yim, Milan Pesic:
Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors. IRPS 2024: 4 - [c13]Andrea Palmieri, Mahdi Tavakoli, Chi Ching, Wenkai Zheng, Shi You, Xiaodong Zhang, Davide Cornigli, Michael Haverty, Navneet Singh, Luca Larcher, Monika Jamieson, Ajay Bhatnagar, Alexander Jansen, Max Gage, Jianshe Tang, Sameer Deshpande, Brian Brown, Arun Srivatsa, Mehul Naik, Bo Xie, Jerry Gelatos, Joung Joo Lee, Xianmin Tang, Gaurav Thareja, Milan Pesic:
Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL. IRPS 2024: 10 - 2023
- [c12]Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi
:
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging. IRPS 2023: 1-6 - [c11]Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung-Bae Kim, Dong Kil Yim, Luca Larcher:
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. IRPS 2023: 1-8 - 2022
- [c10]Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher:
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. IMW 2022: 1-4 - [c9]Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten:
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). IRPS 2022: 3 - [c8]Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher:
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. IRPS 2022: 4 - 2021
- [c7]Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger:
Variability sources and reliability of 3D - FeFETs. IRPS 2021: 1-7
2010 – 2019
- 2019
- [c6]Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann, Thomas Mikolajick, Johann W. Bartha:
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors. DRC 2019: 51-52 - [c5]Andrea Padovani, Milan Pesic, Mondol Anik Kumar, Pieter Blomme, Alexandre Subirats, Senthil Vadakupudhupalayam, Zunaid Baten, Luca Larcher:
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. IRPS 2019: 1-8 - 2017
- [b1]Milan Pesic:
Gate stack engineering for emerging polarization based non-volatile memories. Dresden University of Technology, Germany, BoD Books on Demand 2017, ISBN 978-3-7448-6788-7, pp. 1-137 - [c4]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, Lukas M. Eng, Thomas Mikolajick, Uwe Schroeder:
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. ESSDERC 2017: 160-163 - [c3]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. NVMTS 2017: 1-4 - 2016
- [c2]Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick:
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC 2016: 364-368 - [c1]Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder:
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. ESSDERC 2016: 369-372
Coauthor Index
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