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ORCIDAlok Ranjan 0001
Person information
- affiliation: Singapore University of Technology and Design, Engineering Product Development
Other persons with the same name
- Alok Ranjan 0002
![[0000-0002-9603-9916]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0002-9603-9916")
— Virginia Commonwealth University, Richmond, VA, USA (and 1 more) - Alok Ranjan 0003 — Indian Institute of Information Technology and Management, Gwalior, India
- Alok Ranjan 0004 — Institute of Engineering & Technology Lucknow, India
- Alok Ranjan 0005 — Holtec International Inc.
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2020 – today
- 2020
[c4]Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey:
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. IRPS 2020: 1-7
2010 – 2019
- 2019
- [c3]Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo:
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS 2019: 1-8 - [c2]Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea:
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns. IRPS 2019: 1-12 - 2018
- [c1]Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey:
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. IRPS 2018: 4 - 2016
- [j3]Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey:
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. Microelectron. Reliab. 64: 172-178 (2016) - [j2]Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. Microelectron. Reliab. 64: 204-209 (2016) - 2015
- [j1]Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Microelectron. Reliab. 55(9-10): 1450-1455 (2015)
Coauthor Index
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