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ORCIDJuan Bautista Roldán
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2020 – today
- 2024
[j22]Francesc Aràndiga
, Domingo Barrera, Salah Eddargani, María J. Ibáñez, Juan Bautista Roldán:
Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications. Math. Comput. Simul. 223: 158-170 (2024)- [j21]Christian Acal, Ana M. Aguilera, Francisco J. Alonso, Juan Eloy Ruiz-Castro, Juan Bautista Roldán:
Different PCA approaches for vector functional time series with applications to resistive switching processes. Math. Comput. Simul. 223: 288-298 (2024) - [i2]M. Carmen Aguilera-Morillo, Ana M. Aguilera, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Stochastic modeling of Random Access Memories reset transitions. CoRR abs/2402.05209 (2024) - 2023
- [j20]Juan Bautista Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua:
Variability in Resistive Memories. Adv. Intell. Syst. 5(6) (2023) - 2022
- [j19]Kaichen Zhu, Mohammad Reza Mahmoodi, Zahra Fahimi, Yiping Xiao, Tao Wang, Kristýna Bukvisová, Miroslav Kolíbal, Juan Bautista Roldán, David Perez, Fernando L. Aguirre, Mario Lanza:
Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems. Adv. Intell. Syst. 4(8) (2022) - [c12]David Maldonado, Francisco Jiménez-Molinos, Juan Bautista Roldán, M. B. González, Francesca Campabadal:
An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance. DCIS 2022: 1-6 - [c11]Germán Vaquero, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Hardware implementation of self-organizing maps using memristors, a simulation study. DCIS 2022: 1-6 - 2021
- [j18]Ana M. Aguilera, Christian Acal, M. Carmen Aguilera-Morillo, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Homogeneity problem for basis expansion of functional data with applications to resistive memories. Math. Comput. Simul. 186: 41-51 (2021) - [j17]Enrique Moreno, Pedro González, R. Emadi, Juan Bautista Roldán, E. A. Michael:
BCC-Grid versus SC-Grid in the modeling of a sheet of graphene as a surface boundary condition in the context of ADE-FDTD. Math. Comput. Simul. 186: 52-61 (2021) - [j16]Juan Eloy Ruiz-Castro, Christian Acal, Ana M. Aguilera, M. Carmen Aguilera-Morillo, Juan Bautista Roldán:
Linear-Phase-Type probability modelling of functional PCA with applications to resistive memories. Math. Comput. Simul. 186: 71-79 (2021) - [c10]Binbin Yang, Daniel Arumí, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Juan Bautista Roldán, Mireia Bargallo González, Francesca Campabadal, Liang Fang:
Simulation of serial RRAM cell based on a Verilog-A compact model. DCIS 2021: 1-6 - [c9]Juan Bautista Roldán, David Maldonado, Francisco J. Alonso, Andrés M. Roldán, Fei Hui, Yuanyuan Shi, Francisco Jiménez-Molinos, Ana M. Aguilera, Mario Lanza:
Time series modeling of the cycle-to-cycle variability in h-BN based memristors. IRPS 2021: 1-5 - 2020
- [c8]Gerardo González-Cordero, M. B. González, Francesca Campabadal, Francisco Jiménez-Molinos, Juan Bautista Roldán:
A physically based SPICE model for RRAMs including RTN. DCIS 2020: 1-6 - [c7]Antonio J. Pérez-Ávila, Gerardo González-Cordero, Eduardo Pérez, Emilio Pérez-Bosch Quesada, Mamathamba Kalishettyhalli Mahadevaiaha, Christian Wenger, Juan Bautista Roldán, Francisco Jiménez-Molinos:
Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation. DCIS 2020: 1-6 - [c6]Mireia Bargallo González, Marcos Maestro-Izquierdo, Francesca Campabadal, Samuel Aldana, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. IRPS 2020: 1-4 - [c5]David Maldonado, Juan Bautista Roldán, Andrés M. Roldán, Francisco Jiménez-Molinos, Fei Hui, Y. Shi, Xu Jing, Chao Wen, Mario Lanza:
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. IRPS 2020: 1-5 - [c4]Juan Bautista Roldán, David Maldonado, Francisco Jiménez-Molinos, Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Fei Hui, J. Kong, Y. Shi, Xu Jing, Chao Wen, Marco Antonio Villena, Mario Lanza:
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages. IRPS 2020: 1-5
2010 – 2019
- 2019
- [j15]Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Francisco Jimenez-Molinos, Juan Bautista Roldán:
Phase-type distributions for studying variability in resistive memories. J. Comput. Appl. Math. 345: 23-32 (2019) - [j14]Domingo Barrera, María J. Ibáñez, Francisco Jimenez-Molinos, Andrés M. Roldán, Juan Bautista Roldán:
A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain. J. Comput. Appl. Math. 354: 326-333 (2019) - [j13]M. Carmen Aguilera-Morillo, Ana M. Aguilera, Francisco Jimenez-Molinos, Juan Bautista Roldán:
Stochastic modeling of Random Access Memories reset transitions. Math. Comput. Simul. 159: 197-209 (2019) - [j12]María J. Ibáñez, Francisco Jimenez-Molinos, Juan Bautista Roldán, Rafael José Yáñez García:
Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials. Math. Comput. Simul. 164: 120-130 (2019) - 2018
- [j11]Mohamad Moner Al Chawa, Rodrigo Picos, Juan Bautista Roldán, Francisco Jimenez-Molinos, Marco Antonio Villena, Carol de Benito:
Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach. Int. J. Circuit Theory Appl. 46(1): 29-38 (2018) - 2017
- [j10]Domingo Barrera, María J. Ibáñez, Andrés M. Roldán, Juan Bautista Roldán, Rafael José Yáñez García:
Polynomial pattern finding in scattered data. J. Comput. Appl. Math. 318: 107-116 (2017) - [c3]Ana M. Aguilera, M. C. Aguilera-Morillo, Francisco Jiménez-Molinos, Juan Bautista Roldán:
Modelling Resistive Random Access Memories by means of Functional Principal Component Analysis. MDA 2017: 64-73 - [i1]Rodrigo Picos, Juan Bautista Roldán, Mohamad Moner Al Chawa, Pedro García Fernández, Francisco Jimenez-Molinos, Eugeni García-Moreno:
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors. CoRR abs/1702.01533 (2017) - 2015
- [j9]Pedro González, María J. Ibáñez, Andrés M. Roldán, Juan Bautista Roldán:
An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors. Math. Comput. Simul. 118: 248-257 (2015) - [j8]Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira:
DC self-heating effects modelling in SOI and bulk FinFETs. Microelectron. J. 46(4): 320-326 (2015) - 2014
- [j7]María J. Ibáñez, Juan Bautista Roldán, Andrés M. Roldán, Rafael José Yáñez García:
A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines. Math. Comput. Simul. 102: 1-10 (2014) - 2013
- [c2]Beatriz Blanco-Filgueira, Paula López, Manuel Suarez, Juan Bautista Roldán:
CMOS photodiode model and HDL implementation. ECCTD 2013: 1-4 - 2012
- [j6]Beatriz Blanco-Filgueira, Paula López, Juan Bautista Roldán:
A Verilog-AMS photodiode model including lateral effects. Microelectron. J. 43(12): 980-984 (2012) - [c1]Beatriz Blanco-Filgueira, Paula López, Jens Döge, Manuel Suarez, Juan Bautista Roldán:
Evidence of the lateral collection significance in small CMOS photodiodes. ISCAS 2012: 3098-3101 - 2011
- [j5]Andrés M. Roldán, Juan Bautista Roldán, Càndid Reig Escriva, M.-Dolores Cubells-Beltrán, Diego Ramírez Muñoz, Susana Cardoso, Paulo P. Freitas:
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation. Microelectron. J. 42(2): 365-370 (2011)
1990 – 1999
- 1998
- [j4]Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller:
Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization. VLSI Design 6(1-4): 287-290 (1998) - [j3]F. Gámiz, Juan Bautista Roldán, J. A. López-Villanueva:
Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 - xGex Heterostructures. VLSI Design 8(1-4): 253-256 (1998) - [j2]F. Gámiz, Juan Bautista Roldán, J. A. López-Villanueva:
A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization. VLSI Design 8(1-4): 257-260 (1998) - [j1]Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva:
Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs. VLSI Design 8(1-4): 261-264 (1998)
Coauthor Index
aka: Francisco Jiménez-Molinos
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