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ORCIDTsuyoshi Takahashi
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2010 – 2019
- 2019
[j10]Shinpei Yamashita, Michihiko Suhara, Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto
, Kiyoto Asakawa:
Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz. IEICE Trans. Electron. 102-C(6): 462-465 (2019)- [c9]Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto:
Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. ESSDERC 2019: 214-217 - [c8]Yuya Gaman, Masaki Ishii, Yoichi Kageyama, Tsuyoshi Takahashi, Makoto Nishida, Motonari Shirasu:
Adaptive Learning Method in Facial Expression Recognition Model Using Fuzzy-ART. LifeTech 2019: 85-86 - [c7]Etsuro Nakamura, Tsuyoshi Takahashi, Yoichi Kageyama, Masaki Ishii, Makoto Nishida, Motonari Shirasu:
Shadow Removing Method for Lip Shape Extraction Using Feedforward Neural Network. LifeTech 2019: 87-88 - 2016
- [j9]Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara:
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. 99-C(5): 528-534 (2016) - 2015
- [j8]Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara:
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. 98-C(12): 1112-1119 (2015) - [c6]Tsuyoshi Takahashi, Yoshitaka Shibata, Satoshi Imata, Nobuo Suzuki:
Evaluation of Wake-on-Demand Accurate Activation and In-Vehicle Wireless Connecation Control. BWCCA 2015: 143-149 - [c5]Tsuyoshi Takahashi, Bo Wu, Yoichi Kageyama, Makoto Nishida, Masaki Ishii:
A study of learning data size for automatic face area detection in sequential thermal images. GCCE 2015: 412-413 - 2014
- [j7]Huichao Zhao, Lihui Peng, Tsuyoshi Takahashi, Takuya Hayashi, Kazuyoshi Shimizu, Toshihiro Yamamoto:
Support Vector Regression-Based Data Integration Method for Multipath Ultrasonic Flowmeter. IEEE Trans. Instrum. Meas. 63(12): 2717-2725 (2014) - 2013
- [c4]Yoichi Kageyama, Atsushi Momose, Makoto Nishida, Tsuyoshi Takahashi, Masaki Ishii:
Relationship between physical conditions and lip motion change arising due to amusement feeling. GCCE 2013: 104-105 - [c3]Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara:
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS 2013: 250-252
2000 – 2009
- 2007
- [j6]Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Shinji Yamaura, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose:
A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology. IEEE J. Solid State Circuits 42(3): 637-646 (2007) - 2005
- [j5]Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose:
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. IEEE J. Solid State Circuits 40(10): 2098-2103 (2005) - 2004
- [j4]Toshihide Suzuki, Tsuyoshi Takahashi, Tatsuya Hirose, Masahiko Takikawa:
A 80-gbit/s D-type flip-flop circuit using InP HEMT technology. IEEE J. Solid State Circuits 39(10): 1706-1711 (2004) - 2003
- [j3]Satoshi Masuda, Tsuyoshi Takahashi, Kazukiyo Joshin:
An over-110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission system. IEEE J. Solid State Circuits 38(9): 1479-1484 (2003) - 2002
- [j2]Yasuhiro Nakasha, Toshihide Suzuki, Hideki Kano, Kouji Tsukashima, Akio Ohya, Ken Sawada, Kozo Makiyama, Tsuyoshi Takahashi, Masahiro Nishi, Tatsuya Hirose, Masahiko Takikawa, Yuu Watanabe:
A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology. IEEE J. Solid State Circuits 37(12): 1703-1709 (2002) - 2001
- [j1]Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba:
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. IEEE J. Solid State Circuits 36(9): 1309-1313 (2001)
1990 – 1999
- 1998
- [c2]Toshihiro Hattori, Yusuke Nitta, Mitsuho Seki, Susumu Narita, Kunio Uchiyama, Tsuyoshi Takahashi, Ryuichi Satomura:
Design Methodology of a 200MHz Superscalar Microprocessor: SH-4. DAC 1998: 246-249
1980 – 1989
- 1984
- [c1]Tsuyoshi Takahashi, Satoshi Kojima, Osamu Yamashiro, Kazuhiko Eguchi, Hideki Fukuda:
An MOS digital network model on a modified thevenin equivalent for logic simulation. DAC 1984: 549-555
Coauthor Index
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