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2020 – today
- 2024
[c2]Liang Zhou, Masafumi Tsutsui, Yasuhiro Nakasha, Shiro Ozaki, Takashi Dateki, Yusuke Kumazaki, Toshihiro Ohki:
Sub-THz SC-FDE MIMO Systems with Deep Neural Network Equalization for 100 Gbps of 6G. VTC Fall 2024: 1-5- 2023
- [j5]Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe:
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. IEICE Trans. Electron. 106(10): 605-613 (2023) - [j4]Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki:
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106(11): 661-668 (2023) - 2021
- [j3]Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto
, Norikazu Nakamura:
Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers. IEICE Trans. Electron. 104-C(10): 480-487 (2021)
2010 – 2019
- 2019
- [c1]Yusuke Kumazaki, Keiji Watanabe, Toshihiro Ohki, Junji Kotani, Shiro Ozaki, Yoshitaka Niida, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Norikazu Nakamura:
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates. BCICTS 2019: 1-4 - 2014
- [j2]Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe:
Millimeter-Wave GaN HEMT for Power Amplifier Applications. IEICE Trans. Electron. 97-C(10): 923-929 (2014)
2000 – 2009
- 2005
- [j1]Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose:
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique. IEEE J. Solid State Circuits 40(10): 2098-2103 (2005)
Coauthor Index
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