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"High-Efficiency 250-320GHz Power Amplifiers Using InP-Based ..."
Yusuke Kumazaki et al. (2023)
- Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki:
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106(11): 661-668 (2023)
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