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ORCIDFrancis Balestra
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Journal Articles
- 2017
[j9]Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus
, Luca Perniola, Francis Balestra:
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. Microelectron. Reliab. 69: 47-51 (2017)- 2009
- [j8]M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra:
Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs. Microelectron. Reliab. 49(9-11): 1018-1023 (2009) - 2006
- [j7]A. Benfdila, Francis Balestra:
On the drain current saturation in short channel MOSFETs. Microelectron. J. 37(7): 635-641 (2006) - 2005
- [j6]M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra:
The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs. Microelectron. Reliab. 45(9-11): 1386-1389 (2005) - 2004
- [j5]M. A. Exarchos, François Dieudonné, Jalal Jomaah, George J. Papaioannou, Francis Balestra:
On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs. Microelectron. Reliab. 44(9-11): 1643-1647 (2004) - 2003
- [j4]François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra:
Low frequency noise in 0.12 mum partially and fully depleted SOI technology. Microelectron. Reliab. 43(2): 243-248 (2003) - 2002
- [j3]B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. 42(9-11): 1405-1408 (2002) - 2001
- [j2]Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectron. Reliab. 41(6): 855-860 (2001) - [j1]François Dieudonné, F. Daugé, Jalal Jomaah, C. Raynaud, Francis Balestra:
An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's. Microelectron. Reliab. 41(9-10): 1417-1420 (2001)
Conference and Workshop Papers
- 2023
- [c7]F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha:
Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. IRPS 2023: 1-4 - 2022
- [c6]F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota:
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. ESSDERC 2022: 257-260 - 2021
- [c5]Francis Balestra:
Status and trends in Nanoelectronic devices for the ultimate integration of ICs. ASICON 2021: 1-4 - 2019
- [c4]Francis Balestra:
Nanoscale Devices for the end of the Roadmap. ASICON 2019: 1-4 - 2017
- [c3]Francis Balestra:
Ultra low power and high performance nanoelectronic devices. ASICON 2017: 1049-1052 - 2012
- [c2]Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo:
New parameter extraction method based on split C-V for FDSOI MOSFETs. ESSDERC 2012: 217-220 - 2000
- [c1]O. Rozeau, Sébastien Haendler, Jalal Jomaah, J. Boussey, Francis Balestra, C. Raynaud, J. L. Pelloie:
0.25 μm SOI technologies performance for low-power radio-frequency applications. ICECS 2000: 45-48
Coauthor Index
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