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2020 – today
- 2024
[c4]Papavramidou Panagiota, Sebastien Ricavy, Christopher Mounet, Carine Jahan, Niccolo Castellani, François Andrieu:
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM. IOLTS 2024: 1-7- 2023
- [c3]Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus
:
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited). IRPS 2023: 1-8 - 2021
- [c2]Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, Simon Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, Sebastien Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, Etienne Nowak:
16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. IMW 2021: 1-4
2010 – 2019
- 2017
- [j2]Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra:
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. Microelectron. Reliab. 69: 47-51 (2017) - 2012
- [j1]Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo:
High temperature reliability of μtrench Phase-Change Memory devices. Microelectron. Reliab. 52(9-10): 1928-1931 (2012) - [c1]Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo:
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC 2012: 286-289
Coauthor Index
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