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2020 – today
- 2023
[c10]Lucas Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu:
Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability. IRPS 2023: 1-6- 2022
- [c9]Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle
, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet:
High temperature stability embedded ReRAM for 2x nm node and beyond. IMW 2022: 1-4 - 2021
- [c8]Balraj Arunachalam, Jean-Emmanuel Broquin, Quentin Rafhay, David Roy, Anne Kaminski:
Simulation Study of the Origin of Ge High Speed Photodetector Degradation. IRPS 2021: 1-4
2010 – 2019
- 2019
- [c7]Fatoumata Sy, Quentin Rafhay, Julien Poëtte, Gregory Grosa, C. Besset, Gaelle Beylier, Philippe Grosse, David Roy, Jean-Emmanuel Broquin:
Characterization and Modelling of High Speed Ge Photodetectors Reliability. IRPS 2019: 1-5 - 2017
- [c6]Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo:
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC 2017: 144-147 - 2015
- [c5]Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf:
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. ESSDERC 2015: 242-245 - [c4]Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola:
On the impact of OxRAM-based synapses variability on convolutional neural networks performance. NANOARCH 2015: 193-198 - [c3]Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo:
Impact of short-channel effects on velocity overshoot in MOSFET. NEWCAS 2015: 1-4 - 2014
- [c2]Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo:
Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. ESSDERC 2014: 286-289 - 2012
- [c1]Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo:
New parameter extraction method based on split C-V for FDSOI MOSFETs. ESSDERC 2012: 217-220
Coauthor Index
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