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2020 – today
- 2023
[c7]Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung
, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier:
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. MIXDES 2023: 201-206- 2021
- [j16]Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, Adrian Tulbure:
60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes. Sensors 21(3): 942 (2021)
2010 – 2019
- 2017
- [j15]Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián:
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. IEEE Trans. Ind. Electron. 64(11): 8962-8970 (2017) - 2016
- [j14]Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon:
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64: 429-433 (2016) - 2015
- [j13]Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55(9-10): 1542-1548 (2015) - [j12]Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon:
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62(5): 3182-3191 (2015) - [c6]Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán:
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. ESSDERC 2015: 68-71 - 2014
- [j11]Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà:
Temperature effects on the ruggedness of SiC Schottky diodes under surge current. Microelectron. Reliab. 54(9-10): 2207-2212 (2014) - [j10]Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54(9-10): 2217-2221 (2014) - [c5]Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt:
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. ESSDERC 2014: 150-153 - [c4]Javier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà, Philippe Godignon:
Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing. ESSDERC 2014: 385-388 - 2013
- [c3]Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán:
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC 2013: 427-430 - [c2]Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán:
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC 2013: 103-106 - 2012
- [j9]Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens:
Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52(9-10): 2220-2223 (2012) - [j8]Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán:
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52(9-10): 2250-2255 (2012) - [c1]Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens:
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC 2012: 306-309 - 2011
- [j7]Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti:
SiC Schottky Diodes for Harsh Environment Space Applications. IEEE Trans. Ind. Electron. 58(7): 2582-2590 (2011)
2000 – 2009
- 2008
- [j6]Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán:
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48(8-9): 1444-1448 (2008) - 2007
- [j5]Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon:
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications. Microelectron. J. 38(3): 406-415 (2007) - [j4]Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán:
Coupled electro-thermal simulation of a DC/DC converter. Microelectron. Reliab. 47(12): 2114-2121 (2007) - 2004
- [j3]Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectron. J. 35(8): 659-666 (2004) - [j2]Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectron. J. 35(10): 841-847 (2004) - 2001
- [j1]Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu:
The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. 41(7): 1015-1018 (2001)
Coauthor Index
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