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2020 – today
- 2022
[j4]P. Vigneshwara Raja
, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson:
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectron. J. 128: 105575 (2022)- [c4]Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho:
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. MIXDES 2022: 105-109 - 2020
- [c3]Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle:
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. MIXDES 2020: 181-184
2010 – 2019
- 2015
- [j3]Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55(9-10): 1542-1548 (2015) - [c2]Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli:
An improved junction termination design using deep trenches for superjunction power devices. MIXDES 2015: 547-551 - 2014
- [j2]Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54(9-10): 2217-2221 (2014) - 2013
- [c1]Gaëtan Toulon, Abdelhakim Bourennane, Karine Isoird:
Analysis in commutation of a new high voltage thyristor structure for high temperature. MIXDES 2013: 426-430
2000 – 2009
- 2008
- [j1]L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes:
Switching performance of 65 V vertical N-channel FLYMOSFETs. Microelectron. J. 39(6): 914-921 (2008)
Coauthor Index
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