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ORCIDFrederic Morancho
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2020 – today
- 2022
[j5]P. Vigneshwara Raja
, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson:
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectron. J. 128: 105575 (2022)- [c4]Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho:
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. MIXDES 2022: 105-109 - 2020
- [c3]Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle:
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. MIXDES 2020: 181-184
2010 – 2019
- 2018
- [j4]D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon:
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. Microelectron. Reliab. 88-90: 406-410 (2018) - 2017
- [c2]Saleem Hamady, Bilal Beydoun, Frederic Morancho:
A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions. ICM 2017: 1-4 - 2015
- [c1]Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli:
An improved junction termination design using deep trenches for superjunction power devices. MIXDES 2015: 547-551 - 2012
- [j3]Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren:
Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors. Microelectron. Reliab. 52(3): 503-508 (2012)
2000 – 2009
- 2008
- [j2]L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes:
Switching performance of 65 V vertical N-channel FLYMOSFETs. Microelectron. J. 39(6): 914-921 (2008) - 2007
- [j1]Yann Weber, Jaume Roig, Jean-Michel Reynes, Frederic Morancho, Evgueniy N. Stefanov, Monique Dilhan, Gérard Sarrabayrouse:
Characterisation of P floating islands for 150-200 V FLYMOSFETs. IET Circuits Devices Syst. 1(5): 333-340 (2007)
Coauthor Index
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