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ORCIDViorel Banu
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2010 – 2019
- 2016
[j7]Viorel Banu
, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon:
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64: 429-433 (2016)- 2015
- [j6]Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon:
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62(5): 3182-3191 (2015) - 2014
- [j5]Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà:
Temperature effects on the ruggedness of SiC Schottky diodes under surge current. Microelectron. Reliab. 54(9-10): 2207-2212 (2014) - 2013
- [c2]Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán:
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC 2013: 427-430 - [c1]Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán:
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC 2013: 103-106 - 2012
- [j4]Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán:
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52(9-10): 2250-2255 (2012) - [j3]Luis A. Navarro, Xavier Perpiñà, Miquel Vellvehí, Viorel Banu, Xavier Jordà:
Thermal cycling analysis of high temperature die-attach materials. Microelectron. Reliab. 52(9-10): 2314-2320 (2012) - 2011
- [j2]Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti:
SiC Schottky Diodes for Harsh Environment Space Applications. IEEE Trans. Ind. Electron. 58(7): 2582-2590 (2011)
2000 – 2009
- 2008
- [j1]Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán:
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48(8-9): 1444-1448 (2008)
Coauthor Index
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