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G. Ghidini

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2012
[j13]
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G. Ghidini:
Charge-related phenomena and reliability of non-volatile memories. Microelectron. Reliab. 52(9-10): 1876-1882 (2012)
2009
[j12]
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  - journals/mr/LanzaPNAGS09
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Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49(9-11): 1188-1191 (2009)
2007
[j11]
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  - journals/mr/SebastianiPMG07
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A. Sebastiani, R. Piagge, Alberto Modelli, G. Ghidini:
High-K dielectrics for inter-poly application in non volatile memories. Microelectron. Reliab. 47(4-5): 598-601 (2007)
[j10]
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  - journals/mr/Martin-MartinezGRNACPG07
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Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. Microelectron. Reliab. 47(9-11): 1349-1352 (2007)
2006
[j9]
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  - journals/mr/GerardinGCPG06
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Simone Gerardin, Alessio Griffoni, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress. Microelectron. Reliab. 46(9-11): 1669-1672 (2006)
2005
[j8]
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  - journals/mr/GhidiniLBBGGGG05
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G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, Andrea Ghetti, N. Galbiati, G. Giusto, A. Garavaglia:
Impact of interface and bulk trapped charges on transistor reliability. Microelectron. Reliab. 45(5-6): 857-860 (2005)
[j7]
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  - journals/mr/LangenbuchBVG05
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M. Langenbuch, R. Bottini, Maria Elena Vitali, G. Ghidini:
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. Microelectron. Reliab. 45(5-6): 875-878 (2005)
[j6]
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  - journals/mr/GhidiniCGSSV05
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G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, Maria Elena Vitali:
Tunnel oxide degradation under pulsed stress. Microelectron. Reliab. 45(9-11): 1337-1342 (2005)
2003
[j5]
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  - journals/mr/GhidiniGGGBPSCI03
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G. Ghidini, A. Garavaglia, G. Giusto, Andrea Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, Daniele Ielmini:
Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. Microelectron. Reliab. 43(8): 1221-1227 (2003)
[j4]
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  - journals/mr/GhettiBBGP03
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Andrea Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini, Alessia Pavan:
Anomalous gate oxide conduction on isolation edges: analysis and process optimization. Microelectron. Reliab. 43(8): 1229-1235 (2003)
[j3]
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  - journals/mr/CiminoCPG03
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S. Cimino, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
Ionising radiation effects on MOSFET drain current. Microelectron. Reliab. 43(8): 1247-1251 (2003)
2002
[j2]
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  - journals/mr/GhidiniB02
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G. Ghidini, D. Brazzelli:
Evaluation methodology of thin dielectrics for non-volatile memory application. Microelectron. Reliab. 42(9-11): 1473-1480 (2002)
2001
[j1]
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  - journals/mr/GalbiatiGCL01
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N. Galbiati, G. Ghidini, C. Cremonesi, Luca Larcher:
Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling. Microelectron. Reliab. 41(7): 999-1002 (2001)

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