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2020 – today
- 2023
[c19]Shiyu Zhang
, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. EITCE 2023: 66-72- [c18]Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou:
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. EITCE 2023: 1601-1608 - 2022
- [c17]Yuefeng Wu, Yu Wu, Xintian Zhou, Feng Liu, Lei Zong:
Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping. EITCE 2022: 417-421 - [c16]Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. EITCE 2022: 498-502 - [c15]Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE 2022: 605-610 - [c14]Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. EITCE 2022: 617-622 - 2021
- [c13]Xingyu Fang, Yunpeng Jia, Xintian Zhou, Xinyu Li, Yingying Lei, Kai Zhao:
A Novel Reverse-Conducting IGBT With Built-In Channel Diode. EITCE 2021: 11-16 - [c12]Wanting Yang, Dongqing Hu, Xintian Zhou, Xinyu Li, Xingyu Fang, Kai Zhao:
Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. EITCE 2021: 22-27 - [c11]Yingying Lei, Yu Wu, Xintian Zhou, Meng Liu, Xinyu Li, Xingyu Fang, Kai Zhao, Zheng Zhong:
Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET. EITCE 2021: 65-70 - [c10]Jinpeng Zhou, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Yue Tan, Xinyu Li:
Anti-total dose effect design of half-bridge driving chip. EITCE 2021: 76-81 - [c9]Kai Zhao, Yu Wu, Yueyang Liu, Xintian Zhou, Zhaomin Yao, Yingying Lei:
The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode. EITCE 2021: 120-126 - [c8]Lihao Wang, Xintian Zhou, Feng Liu, Lei Zhang, Yu Wu, Xinyu Li:
High voltage CIBH diodes with new structure on the cathode side of the edge. EITCE 2021: 194-199 - [c7]Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Xingyu Fang, Zhonghan Deng:
Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage. EITCE 2021: 226-231 - [c6]Chen Gao, Yu Wu, Yueyang Liu, Xintian Zhou, Kesheng Wang, Zheng Zhong:
Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping. EITCE 2021: 1449-1454 - [c5]Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu:
3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. EITCE 2021: 1520-1525 - 2020
- [c4]Yue Tan, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Fujie Zhao, Xinyu Li, Jinpeng Zhou:
Architecture-level Radiation-Hardened design applied to halfbridge GaN driver. EITCE 2020: 891-895 - [c3]Lei Sun, Dongqing Hu, Xintian Zhou, Meng Liu, Jie Cao:
Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts. EITCE 2020: 986-990 - [c2]Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun:
The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. EITCE 2020: 1060-1064 - [c1]Meng Liu, Yu Wu, Xintian Zhou, Jie Cao, Lei Sun, Lihao Wang:
Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode. EITCE 2020: 1065-1069
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