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2020 – today
- 2023
[c10]Shiyu Zhang
, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. EITCE 2023: 66-72- [c9]Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou:
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. EITCE 2023: 1601-1608 - [c8]Dongqing Hu, Hansheng Li, Yuxin Kang, Jiayu Luo, Qingguo Yan, Ying Guo, Lei Cui, Jun Feng, Lin Yang:
Automated Region Learning Via Cell-Level Labels to Modify Cell Detection Process For Histopathological Images. ISBI 2023: 1-5 - 2022
- [c7]Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. EITCE 2022: 498-502 - [c6]Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE 2022: 605-610 - [c5]Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. EITCE 2022: 617-622 - [i1]Yuxin Kang, Hansheng Li, Xuan Zhao, Dongqing Hu, Feihong Liu, Lei Cui, Jun Feng, Lin Yang:
Invariant Content Synergistic Learning for Domain Generalization of Medical Image Segmentation. CoRR abs/2205.02845 (2022) - 2021
- [c4]Yuxin Kang, Hansheng Li, Zhuoyue Wu, Feihong Liu, Dongqing Hu, Lei Cui, Jun Feng, Lin Yang:
Boosting Boundary Representation for Gland Instance Segmentation. BIBM 2021: 1749-1756 - [c3]Wanting Yang, Dongqing Hu, Xintian Zhou, Xinyu Li, Xingyu Fang, Kai Zhao:
Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. EITCE 2021: 22-27 - [c2]Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu:
3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. EITCE 2021: 1520-1525 - 2020
- [c1]Lei Sun, Dongqing Hu, Xintian Zhou, Meng Liu, Jie Cao:
Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts. EITCE 2020: 986-990
2010 – 2019
- 2018
- [j1]Yunpeng Jia, Zhenhua Lin, Dongqing Hu, Yu Wu, Peng Li, Guanghai Liu:
Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes. Microelectron. Reliab. 82: 37-41 (2018)
Coauthor Index
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