default search action
"Optimized Design of Trench Termination for High-Voltage β-Ga2O3 ..."
Shiyu Zhang et al. (2023)
- Shiyu Zhang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. EITCE 2023: 66-72
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.