"Design and simulation study of multi-trench termination for 1200V SiC ..."

Chongning Zhao et al. (2022)

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DOI: 10.1145/3573428.3573515

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-04

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Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. EITCE 2022: 498-502

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