"The Influence of Backside Floating P Area on the Overcurrent Reverse ..."

Jie Cao et al. (2020)

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DOI: 10.1145/3443467.3443904

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-04

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Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun:
The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. EITCE 2020: 1060-1064

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