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2020 – today
- 2022
[c10]Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo:
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. IRPS 2022: 2
2010 – 2019
- 2019
- [c9]Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder:
Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD. IRPS 2019: 1-5 - [c8]Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder:
Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery. IRPS 2019: 1-5 - 2018
- [c7]Andrew Kim, Baozhen Li, Barry P. Linder:
Transient self-heating modeling and simulations of back-end-of-line interconnects. IRPS 2018: 2-1 - [c6]Baozhen Li, Andrew Kim, Paul McLaughlin, Barry P. Linder, Cathryn Christiansen:
Electromigration characteristics of power grid like structures. IRPS 2018: 4 - [c5]Franco Stellari, Alan J. Weger, Keith A. Jenkins, Giuseppe La Rosa, Barry P. Linder, Peilin Song:
Estimating transistor channel temperature using time-resolved and time-integrated NIR emission. IRPS 2018: 6 - 2015
- [c4]Franco Stellari, Keith A. Jenkins, Alan J. Weger, Barry P. Linder, Peilin Song:
Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements. IRPS 2015: 2 - [c3]Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla:
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL). IRPS 2015: 2 - [c2]Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song:
Analyzing path delays for accelerated testing of logic chips. IRPS 2015: 6 - 2013
- [c1]Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu:
Improving and optimizing reliability in future technologies with high-κ dielectrics. VLSI-DAT 2013: 1-4
2000 – 2009
- 2003
- [j5]James H. Stathis
, Rosana Rodríguez, Barry P. Linder:
Circuit implications of gate oxide breakdown. Microelectron. Reliab. 43(8): 1193-1197 (2003) - [j4]James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo:
Reliability of ultra-thin oxides in CMOS circuits. Microelectron. Reliab. 43(9-11): 1353-1360 (2003) - [j3]Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang:
Influence and model of gate oxide breakdown on CMOS inverters. Microelectron. Reliab. 43(9-11): 1439-1444 (2003) - 2002
- [j2]Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo:
Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectron. Reliab. 42(9-11): 1445-1448 (2002) - [j1]Salvatore Lombardo, James H. Stathis, Barry P. Linder:
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectron. Reliab. 42(9-11): 1481-1484 (2002)
Coauthor Index
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