"Dependence of Post-Breakdown Conduction on Gate Oxide Thickness."

Salvatore Lombardo, James H. Stathis, Barry P. Linder (2002)

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DOI: 10.1016/S0026-2714(02)00174-9

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type: Journal Article

metadata version: 2024-10-06

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Salvatore Lombardo, James H. Stathis, Barry P. Linder:
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectron. Reliab. 42(9-11): 1481-1484 (2002)

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