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ORCIDDavid M. Binkley
Person information
- affiliation: University of North Carolina at Charlotte, Department of Electrical and Computer Engineering, NC, USA
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Journal Articles
- 2006
[j4]Srikanth S. Mohan, Arun Ravindran, David M. Binkley, Arindam Mukherjee:
Power Optimized Design of CMOS Programmable Gain Amplifiers. J. Low Power Electron. 2(2): 259-270 (2006)- 2004
- [j3]Brian K. Swann, Benjamin J. Blalock, Lloyd G. Clonts, David M. Binkley, James M. Rochelle, Eric Breeding, K. Michelle Baldwin:
A 100-ps time-resolution CMOS time-to-digital converter for positron emission tomography imaging applications. IEEE J. Solid State Circuits 39(11): 1839-1852 (2004) - 2003
- [j2]David M. Binkley, C. E. Hopper, Steve D. Tucker, Brian C. Moss, James M. Rochelle, Daniel Foty:
A CAD methodology for optimizing transistor current and sizing in analog CMOS design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 22(2): 225-237 (2003) - 1998
- [j1]David M. Binkley, James M. Rochelle, Brian K. Swann, Lloyd G. Clonts, Rhonda N. Goble:
A micropower CMOS, direct-conversion, VLF receiver chip for magnetic-field wireless applications. IEEE J. Solid State Circuits 33(3): 344-358 (1998)
Conference and Workshop Papers
- 2012
- [c10]Yi Yang, David M. Binkley, Changzhi Li
:
Using moderate inversion to optimize voltage gain, thermal noise, and settling time in two-stage CMOS amplifiers. ISCAS 2012: 432-435 - 2011
- [c9]Yi Yang, David M. Binkley, Lu Li, Changzhan Gu, Changzhi Li:
All-CMOS subbandgap reference circuit operating at low supply voltage. ISCAS 2011: 893-896 - 2009
- [c8]Christian Jesús B. Fayomi, Gilson I. Wirth, David M. Binkley, Akira Matsuzawa:
An experimental 0.6-V 57.5-fJ/conversion-step 250-kS/s 8-bit rail-to-rail successive approximation ADC in 0.18µm CMOS. ICECS 2009: 195-198 - 2008
- [c7]David M. Binkley, Helmut E. Graeb, Georges G. E. Gielen, Jaijeet S. Roychowdhury:
From Transistor to PLL - Analogue Design and EDA Methods. DATE 2008 - 2002
- [c6]Suriya Ashok Kumar, Rafic Z. Makki, David M. Binkley:
IDDT Testing of Embedded CMOS SRAMs. DATE 2002: 1117 - [c5]Daniel Foty, Matthias Bucher, David M. Binkley:
Re-interpreting the MOS transistor via the inversion coefficient and the continuum of gms/Id. ICECS 2002: 1179-1182 - [c4]Matthias Bucher, Dimitrios Kazazis, François Krummenacher, David M. Binkley, Daniel Foty, Yannis Papananos:
Analysis of transconductances at all levels of inversion in deep submicron CMOS. ICECS 2002: 1183-1186 - 2001
- [c3]Daniel Foty, David M. Binkley:
Re-Connecting MOS Modeling and Circuit Design: New Methods for Design Quality. ISQED 2001: 13 - 2000
- [c2]Daniel Foty, David M. Binkley:
MOSFET modeling and circuit design: re-establishing a lost connection (tutorial). DAC 2000: 560 - [c1]David M. Binkley, Matthias Bucher, Daniel Foty:
Design-oriented characterization of CMOS over the continuum of inversion level and channel length. ICECS 2000: 161-164
Coauthor Index
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