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Daniel Foty
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2010 – 2019
- 2013
- [c10]Daniel Foty, Bruce Smith, Saurabh Sinha, Michael Schröter:
Expanding wireless bandwidth in a power-efficient way: developing a viable mm-wave radio technology. EWDTS 2013: 1-6
2000 – 2009
- 2005
- [j4]Daniel Foty, Klaus Runge:
What's Ahread in High-Speed Wireless Data Communications? The Future Will Be Better Tomorrow - And Different Than What We've Been Expecting. Afr. J. Inf. Commun. Technol. 1(1) (2005) - 2004
- [c9]Daniel Foty:
Perspectives on scaling theory and CMOS technology - understanding the past, present, and future. ICECS 2004: 631-637 - [c8]Gennady Gildenblat, Colin C. McAndrew, Hailing Wang, Weimin Wu, Daniel Foty, Laurent Lemaitre, Peter Bendix:
Advanced compact models: gateway to modern CMOS design. ICECS 2004: 638-641 - [c7]Peter Bendix, Daniel Foty, David Pachura:
Practical aspects of MOS transistor model "accuracy" in modern CMOS technology. ICECS 2004: 642-645 - 2003
- [j3]David M. Binkley, C. E. Hopper, Steve D. Tucker, Brian C. Moss, James M. Rochelle, Daniel Foty:
A CAD methodology for optimizing transistor current and sizing in analog CMOS design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 22(2): 225-237 (2003) - 2002
- [c6]Daniel Foty, Matthias Bucher, David M. Binkley:
Re-interpreting the MOS transistor via the inversion coefficient and the continuum of gms/Id. ICECS 2002: 1179-1182 - [c5]Matthias Bucher, Dimitrios Kazazis, François Krummenacher, David M. Binkley, Daniel Foty, Yannis Papananos:
Analysis of transconductances at all levels of inversion in deep submicron CMOS. ICECS 2002: 1183-1186 - [c4]Daniel Foty:
MOS Modeling, Design Quality, and Modern Analog Design (Tutorial Abstract). ISQED 2002: 11 - 2001
- [c3]Daniel Foty, David M. Binkley:
Re-Connecting MOS Modeling and Circuit Design: New Methods for Design Quality. ISQED 2001: 13 - 2000
- [c2]Daniel Foty, David M. Binkley:
MOSFET modeling and circuit design: re-establishing a lost connection (tutorial). DAC 2000: 560 - [c1]David M. Binkley, Matthias Bucher, Daniel Foty:
Design-oriented characterization of CMOS over the continuum of inversion level and channel length. ICECS 2000: 161-164
1990 – 1999
- 1994
- [j2]Daniel Foty, Edward J. Nowak:
MOSFET technology for low-voltage/low-power applications. IEEE Micro 14(3): 68-77 (1994) - 1991
- [j1]Edward J. Farrell, Perry A. Appino, Daniel Foty, Thomas D. Linton Jr.:
Visual interpretation of multidimensional computations and transistor design. IBM J. Res. Dev. 35(1): 26-44 (1991)
Coauthor Index
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