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ORCIDJosef Bock
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- affiliation: Infineon Technologies, AG, Neubiberg, Germany
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Journal Articles
- 2017
[j10]C. Mukherjee
, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Boeck, Klaus Aufinger, Cristell Maneux:
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit. Microelectron. Reliab. 73: 146-152 (2017)- [j9]Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - [j8]Michael Schröter, Tommy Rosenbaum, Pascal Chevalier, Bernd Heinemann, Sorin P. Voinigescu, Ed Preisler, Josef Böck, Anindya Mukherjee:
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proc. IEEE 105(6): 1068-1086 (2017) - 2009
- [j7]K.-H. Allers, Josef Böck, S. Boguth, K. Goller, Herbert Knapp, Rudolf Lachner:
Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric. Microelectron. Reliab. 49(12): 1520-1528 (2009) - 2007
- [j6]Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz:
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. IEEE J. Solid State Circuits 42(10): 2099-2106 (2007) - 2005
- [j5]Herbert Knapp, Martin Wurzer, Werner Perndl, Klaus Aufinger, Josef Böck, Thomas F. Meister:
100-Gb/s 27-1 and 54-Gb/s 211-1 PRBS generators in SiGe bipolar technology. IEEE J. Solid State Circuits 40(10): 2118-2125 (2005) - 2004
- [j4]Hao Li, Hans-Martin Rein, Thomas Suttorp, Josef Böck:
Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz. IEEE J. Solid State Circuits 39(10): 1650-1658 (2004) - 2001
- [j3]Herbert Knapp, Josef Böck, Martin Wurzer, Günter Ritzberger, Klaus Aufinger, Ludwig Treitinger:
2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology. IEEE J. Solid State Circuits 36(9): 1420-1423 (2001) - 1999
- [j2]Martin Wurzer, Josef Böck, Herbert Knapp, Wolfgang Zirwas, Fritz Schumann, Alfred Felder:
A 40-Gb/s integrated clock and data recovery circuit in a 50-GHz fT silicon bipolar technology. IEEE J. Solid State Circuits 34(9): 1320-1324 (1999) - 1996
- [j1]Alfred Felder, Michael Möller, Josef Popp, Josef Böck, Hans-Martin Rein:
46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology. IEEE J. Solid State Circuits 31(4): 481-486 (1996)
Conference and Workshop Papers
- 2018
- [c6]Pascal Chevalier, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Böck:
SiGe BiCMOS Current Status and Future Trends in Europe. BCICTS 2018: 64-71 - [c5]Dirk Manger, Wolfgang Liebl, S. Boguth, B. Binder, Klaus Aufinger, C. Dahl, C. Hengst, A. Pribil, J. Oestreich, S. Rohmfeld, S. Rothenhaeusser, D. Tschumakow, Josef Boeck:
Integration of SiGe HBT with fT=305GHz, fmax=537GHz in 130nm and 90nm CMOS. BCICTS 2018: 76-79 - 2016
- [c4]C. Mukherjee, Thomas Jacquet, Thomas Zimmer, Cristell Maneux, Anjan Chakravorty, Josef Boeck, Klaus Aufinger:
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. ESSDERC 2016: 260-263 - 2007
- [c3]Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology. ESSCIRC 2007: 356-359 - [c2]Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. ISSCC 2007: 430-613 - 2002
- [c1]Günter Ritzberger, Josef Böck, Herbert Knapp, Ludwig Treitinger, Arpad L. Scholtz:
38 GHz low-power static frequency divider in SiGe bipolar technology. ISCAS (4) 2002: 413-416
Coauthor Index
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