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2010 – 2019
- 2019
[c11]Daniel Reiter
, Hao Li, Herbert Knapp, Jonas Kammerer, Jonas Fritzin, Soran Majied, Badou Sene, Nils Pohl:
A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology. BCICTS 2019: 1-4- [c10]Badou Sene, Herbert Knapp, Hao Li, Jonas Kammerer, Soran Majied, Klaus Aufinger, Jonas Fritzin, Daniel Reiter, Nils Pohl:
A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology. BCICTS 2019: 1-4 - [c9]Daniel Reiter, Hao Li, Herbert Knapp, Jonas Kammerer, Soran Majied, Badou Sene, Nils Pohl:
A Low Phase Noise, Wide Tuning Range 20GHz Magnetic-Coupled Hartley-VCO in a 28nm CMOS Technology. RWS 2019: 1-3 - 2014
- [c8]Franz Dielacher, Marc Tiebout, Rudolf Lachner, Herbert Knapp, Klaus Aufinger, Willy Sansen:
SiGe BiCMOS technology and circuits for active safety systems. VLSI-DAT 2014: 1-4 - 2012
- [j9]Marc Tiebout, Hans-Dieter Wohlmuth, Herbert Knapp, Raffaele Salerno, Michael Druml, Mirjana Rest, Johann Kaeferboeck, Johann Wuertele, Sherif Sayed Ahmed, Andreas Schiessl, Ralf Juenemann, Anna Zielska:
Low Power Wideband Receiver and Transmitter Chipset for mm-Wave Imaging in SiGe Bipolar Technology. IEEE J. Solid State Circuits 47(5): 1175-1184 (2012) - 2011
- [j8]Martin Jahn, Herbert Knapp, Andreas Stelzer:
A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement. IEEE J. Solid State Circuits 46(9): 2009-2020 (2011)
2000 – 2009
- 2009
- [j7]K.-H. Allers, Josef Böck, S. Boguth, K. Goller, Herbert Knapp, Rudolf Lachner:
Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric. Microelectron. Reliab. 49(12): 1520-1528 (2009) - [c7]Vadim Issakov, Marc Tiebout, Herbert Knapp, Yiqun Cao, Werner Simbürger:
Merged power amplifier and mixer circuit topology for radar applications in CMOS. ESSCIRC 2009: 300-303 - [c6]Vadim Issakov, Herbert Knapp, Filippo Magrini, Andreas Thiede, Werner Simbürger, Linus Maurer:
Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology. ESSCIRC 2009: 308-311 - 2007
- [j6]Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz:
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. IEEE J. Solid State Circuits 42(10): 2099-2106 (2007) - [c5]Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology. ESSCIRC 2007: 356-359 - [c4]Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. ISSCC 2007: 430-613 - 2005
- [j5]Herbert Knapp, Martin Wurzer, Werner Perndl, Klaus Aufinger, Josef Böck, Thomas F. Meister:
100-Gb/s 27-1 and 54-Gb/s 211-1 PRBS generators in SiGe bipolar technology. IEEE J. Solid State Circuits 40(10): 2118-2125 (2005) - 2004
- [j4]Werner Perndl, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Werner Simbürger, Arpad L. Scholtz:
Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology. IEEE J. Solid State Circuits 39(10): 1773-1777 (2004) - 2003
- [j3]Daniel Kehrer, Hans-Dieter Wohlmuth, Herbert Knapp, Martin Wurzer, Arpad L. Scholtz:
40-Gb/s 2: 1 multiplexer and 1: 2 demultiplexer in 120-nm standard CMOS. IEEE J. Solid State Circuits 38(11): 1830-1837 (2003) - 2002
- [c3]Günter Ritzberger, Josef Böck, Herbert Knapp, Ludwig Treitinger, Arpad L. Scholtz:
38 GHz low-power static frequency divider in SiGe bipolar technology. ISCAS (4) 2002: 413-416 - 2001
- [j2]Herbert Knapp, Josef Böck, Martin Wurzer, Günter Ritzberger, Klaus Aufinger, Ludwig Treitinger:
2-GHz/2-mW and 12-GHz/30-mW dual-modulus prescalers in silicon bipolar technology. IEEE J. Solid State Circuits 36(9): 1420-1423 (2001)
1990 – 1999
- 1999
- [j1]Martin Wurzer, Josef Böck, Herbert Knapp, Wolfgang Zirwas, Fritz Schumann, Alfred Felder:
A 40-Gb/s integrated clock and data recovery circuit in a 50-GHz fT silicon bipolar technology. IEEE J. Solid State Circuits 34(9): 1320-1324 (1999) - 1998
- [c2]Herbert Knapp, Wilhelm Wilhelm, Mira Rest, Hans-Peter Trost:
A 3.8-mW 2.5-GHz dual-modulus prescaler in a 0.8 µm silicon bipolar production technology. ISLPED 1998: 20-23 - 1994
- [c1]Ernst Bonek, Gerhard Schultes, Peter Kreuzgruber, Werner Simbürger, Peter Weger, T. C. Leslie, J. Popp, Herbert Knapp, N. Rohringer:
Personal communications transceiver architectures for monolithic integration. PIMRC 1994: 363-368
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