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Anant K. Agarwal
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2020 – today
- 2024
- [c12]Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, Shengnan Zhu:
Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress. IRPS 2024: 1-6 - [c11]Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori:
Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs. IRPS 2024: 1-6 - 2023
- [c10]Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu:
Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs. IRPS 2023: 1-7 - [c9]Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi
, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen:
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs. IRPS 2023: 1-5 - 2022
- [c8]Emran K. Ashik
, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra
, Woongje Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee
:
Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. IRPS 2022: 3 - [c7]Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant K. Agarwal:
Defects in 4H-SiC epilayers affecting device yield and reliability. IRPS 2022: 65-1 - [c6]Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran K. Ashik
, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman A. Fayed:
A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology. MWSCAS 2022: 1-4 - 2021
- [j2]Susanna Yu
, Marvin H. White, Anant K. Agarwal
:
Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs. IEEE Access 9: 149118-149124 (2021) - [c5]Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan:
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS 2021: 1-7 - [c4]Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emaran Ashik, Adam J. Morgan, Bongmook Lee
, Woongje Sung, Marvin H. White, Ayman A. Fayed, Anant K. Agarwal:
SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology. MWSCAS 2021: 966-969 - 2020
- [c3]Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth
, Marvin H. White, Anant K. Agarwal:
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS 2020: 1-5 - [c2]Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth
, Marvin H. White, Anant K. Agarwal:
Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c1]Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, Anant K. Agarwal:
Design Strategies for Rugged SiC Power Devices. IRPS 2019: 1-5
1990 – 1999
- 1992
- [j1]Vineeta Agrawal, Anant K. Agarwal, Krishna Kant:
A study of single-phase to three-phase cycloconverters using PSPICE. IEEE Trans. Ind. Electron. 39(2): 141-148 (1992)
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