"Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial ..."

Limeng Shi et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529373

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori:
Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs. IRPS 2024: 1-6

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