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Woongje Sung
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2020 – today
- 2023
- [c8]Dongyoung Kim, Skylar DeBoer, Stephen A. Mancini, Sundar Babu Isukapati, Justin Lynch, Nick Yun, Adam J. Morgan, Seung Yup Jang, Woongje Sung:
Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs. IRPS 2023: 1-4 - 2022
- [c7]Emran K. Ashik, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, Woongje Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee:
Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. IRPS 2022: 3 - [c6]Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Justin Lynch, Yafei Liu, Balaji Raghothamachar, Minseok Kang, Anant Agarwal, Nadeemullah Mahadik, Robert Stahlbush, Michael Dudley, Woongje Sung:
Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures. IRPS 2022: 62-1 - [c5]Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant K. Agarwal:
Defects in 4H-SiC epilayers affecting device yield and reliability. IRPS 2022: 65-1 - [c4]Hua Zhang, Tianshi Liu, Utsav Gupta, Sundar Babu Isukapati, Emran K. Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Anant K. Agarwal, Ayman A. Fayed:
A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology. MWSCAS 2022: 1-4 - 2021
- [c3]Dongyoung Kim, Nick Yun, Woongje Sung:
Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study. IRPS 2021: 1-4 - [c2]Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emaran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Marvin H. White, Ayman A. Fayed, Anant K. Agarwal:
SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology. MWSCAS 2021: 966-969 - 2020
- [c1]Dongyoung Kim, Adam J. Morgan, Nick Yun, Woongje Sung, Anant Agarwal, Robert Kaplar:
Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. IRPS 2020: 1-6
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