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2020 – today
- 2022
[c4]Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song:
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. ISSCC 2022: 136-137
2010 – 2019
- 2019
- [j12]Junyoung Ko, Younghwi Yang, Jisu Kim, Cheon An Lee, Young-Sun Min, Jin-Young Chun, Moosung Kim, Seong-Ook Jung
:
Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory. IEEE Trans. Very Large Scale Integr. Syst. 27(8): 1828-1839 (2019) - 2017
- [j11]Junyoung Ko, Younghwi Yang, Jisu Kim, Younghoon Oh, Hyun Kook Park, Seong-Ook Jung:
Incremental Bitline Voltage Sensing Scheme With Half-Adaptive Threshold Reference Scheme in MLC PRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(6): 1444-1455 (2017) - [j10]Tae Hoon Choi, Hanwool Jeong, Younghwi Yang, Juhyun Park, Seong-Ook Jung:
SRAM Operational Mismatch Corner Model for Efficient Circuit Design and Yield Analysis. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(8): 2063-2072 (2017) - [j9]Tae Woo Oh, Hanwool Jeong, Kyoman Kang, Juhyun Park, Younghwi Yang, Seong-Ook Jung:
Power-Gated 9T SRAM Cell for Low-Energy Operation. IEEE Trans. Very Large Scale Integr. Syst. 25(3): 1183-1187 (2017) - 2016
- [j8]Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(7): 1023-1032 (2016) - [j7]Kyoman Kang, Hanwool Jeong, Younghwi Yang, Juhyun Park, Ki-Ryong Kim, Seong-Ook Jung:
Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1342-1350 (2016) - [c3]Junyoung Ko, Younghwi Yang, Seong-Ook Jung, Jisu Kim, Cheon An Lee, Young-Sun Min, Jin-Young Chun, Moosung Kim:
WL under-driving scheme with decremental step voltage and incremental step time for high-capacity NAND flash memory. ISCAS 2016: 1022-1025 - 2015
- [j6]Hanwool Jeong, Taewon Kim, Younghwi Yang, Taejoong Song, Gyu-Hong Kim, Hyo-Sig Won, Seong-Ook Jung:
Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(4): 1062-1070 (2015) - [j5]Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(6): 1538-1545 (2015) - [j4]Heechai Kang, Jisu Kim, Hanwool Jeong, Younghwi Yang, Seong-Ook Jung:
Architecture-Aware Analytical Yield Model for Read Access in Static Random Access Memory. IEEE Trans. Very Large Scale Integr. Syst. 23(4): 752-765 (2015) - [j3]Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 23(11): 2748-2752 (2015) - 2014
- [j2]Hanwool Jeong, Younghwi Yang, Junha Lee, Jisu Kim, Seong-Ook Jung:
One-Sided Static Noise Margin and Gaussian-Tail-Fitting Method for SRAM. IEEE Trans. Very Large Scale Integr. Syst. 22(6): 1262-1269 (2014) - 2013
- [j1]Mingu Kang, Jisu Kim, Younghwi Yang, Seong-Ook Jung:
Dynamic mixed serial-parallel content addressable memory (DMSP CAM). Int. J. Circuit Theory Appl. 41(7): 721-731 (2013) - 2012
- [c2]Hanwool Jeong, Younghwi Yang, Junha Lee, Jisu Kim, Seong-Ook Jung:
Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits. ICECS 2012: 833-836 - [c1]Junha Lee, Hanwool Jeong, Younghwi Yang, Jisu Kim, Seong-Ook Jung:
Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM. ISOCC 2012: 479-482
Coauthor Index
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