"Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With ..."

Younghwi Yang et al. (2016)

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DOI: 10.1109/TCSI.2016.2556118

access: closed

type: Journal Article

metadata version: 2020-05-22

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Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(7): 1023-1032 (2016)

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