"SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting ..."

Younghwi Yang et al. (2015)

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DOI: 10.1109/TCSI.2015.2416814

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type: Journal Article

metadata version: 2020-05-22

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Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(6): 1538-1545 (2015)

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