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ORCIDTae Woo Oh
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- affiliation: Yonsei University, Seoul, South Korea
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2020 – today
- 2024
[j16]Sehee Lim
, Junghyeon Hwang, Dong Han Ko, Se Keon Kim, Tae Woo Oh, Sanghun Jeon, Seong-Ook Jung:
Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security. IEEE Internet Things J. 11(16): 27676-27686 (2024)- [j15]Sekeon Kim, Sehee Lim, Dong Han Ko, Tae Woo Oh, Seong-Ook Jung:
Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation. IEEE Trans. Circuits Syst. I Regul. Pap. 71(1): 274-286 (2024) - 2023
- [j14]Tae Woo Oh, Juhyun Park, Tae Hyun Kim, Keonhee Cho, Seong-Ook Jung:
Local Bit-Line SRAM Architecture With Data-Aware Power-Gating Write Assist. IEEE Trans. Circuits Syst. II Express Briefs 70(1): 306-310 (2023) - 2022
- [j13]Keonhee Cho, Heekyung Choi, In Jun Jung, Ji Sang Oh, Tae Woo Oh, Ki-Ryong Kim, Giseok Kim, Taemin Choi, Changsu Sim, Taejoong Song, Seong-Ook Jung:
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling. IEEE J. Solid State Circuits 57(4): 1039-1048 (2022) - [j12]Keonhee Cho, Juhyun Park, Ki-Ryong Kim, Tae Woo Oh, Seong-Ook Jung:
SRAM Write Assist Circuit Using Cell Supply Voltage Self-Collapse With Bitline Charge Sharing for Near-Threshold Operation. IEEE Trans. Circuits Syst. II Express Briefs 69(3): 1567-1571 (2022) - 2021
- [j11]Se Keon Kim, Tae Woo Oh, Sehee Lim, Dong Han Ko, Seong-Ook Jung:
High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops. IEEE Access 9: 35549-35561 (2021) - [j10]Ki-Ryong Kim, Tae Woo Oh, Seong-Ook Jung:
Bitline Charge Sharing Suppressed Bitline and Cell Supply Collapse Assists for Energy-Efficient 6T SRAM. IEEE Access 9: 57393-57403 (2021) - [j9]Ji Sang Oh, Juhyun Park, Keonhee Cho, Tae Woo Oh, Seong-Ook Jung:
Differential Read/Write 7T SRAM With Bit-Interleaved Structure for Near-Threshold Operation. IEEE Access 9: 64105-64115 (2021) - [j8]Dong Han Ko, Tae Woo Oh, Sehee Lim, Se Keon Kim, Seong-Ook Jung:
Comparative Analysis and Energy-Efficient Write Scheme of Ferroelectric FET-Based Memory Cells. IEEE Access 9: 127895-127905 (2021) - [c4]Keonhee Cho, Heekyung Choi, In Jun Jung, Ji Sang Oh, Tae Woo Oh, Ki-Ryong Kim, Giseok Kim, Taemin Choi, Changsoo Sim, Taejoong Song, Seong-Ook Jung:
SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased with Technology Scaling. VLSI Circuits 2021: 1-2 - 2020
- [j7]Keonhee Cho, Juhyun Park, Tae Woo Oh, Seong-Ook Jung:
One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation. IEEE Trans. Circuits Syst. I Fundam. Theory Appl. 67-I(5): 1551-1561 (2020) - [j6]Juhyun Park, Tae Woo Oh, Seong-Ook Jung:
pMOS Pass Gate Local Bitline SRAM Architecture With Virtual $V_{\mathrm{SS}}$ for Near-Threshold Operation. IEEE Trans. Very Large Scale Integr. Syst. 28(4): 1079-1083 (2020)
2010 – 2019
- 2019
- [j5]Hanwool Jeong, Se Hyeok Oh, Tae Woo Oh, Hoonki Kim, Changnam Park, Woojin Rim, Taejoong Song, Seong-Ook Jung:
Bitline Charge-Recycling SRAM Write Assist Circuitry for $V_{\mathrm{MIN}}$ Improvement and Energy Saving. IEEE J. Solid State Circuits 54(3): 896-906 (2019) - 2018
- [j4]Hanwool Jeong, Tae Woo Oh, Seung Chul Song, Seong-Ook Jung:
Sense-Amplifier-Based Flip-Flop With Transition Completion Detection for Low-Voltage Operation. IEEE Trans. Very Large Scale Integr. Syst. 26(4): 609-620 (2018) - [c3]Hyun Kook Park, Tae Woo Oh, Seong-Ook Jung:
A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation. ICECS 2018: 273-276 - [c2]Tae Woo Oh, Seong-Ook Jung:
SRAM Cell with Data-Aware Power-Gating Write-Asist for Near-Threshold Operation. ISCAS 2018: 1-4 - [c1]Suk Min Kim, Byungkyu Song, Tae Woo Oh, Seong-Ook Jung:
Analysis on Sensing Yield of Voltage Latched Sense Amplifier for Low Power DRAM. PRIME 2018: 65-68 - 2017
- [j3]Tae Woo Oh, Hanwool Jeong, Juhyun Park, Seong-Ook Jung:
Pre-Charged Local Bit-Line Sharing SRAM Architecture for Near-Threshold Operation. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(10): 2737-2747 (2017) - [j2]Tae Woo Oh, Hanwool Jeong, Kyoman Kang, Juhyun Park, Younghwi Yang, Seong-Ook Jung:
Power-Gated 9T SRAM Cell for Low-Energy Operation. IEEE Trans. Very Large Scale Integr. Syst. 25(3): 1183-1187 (2017) - 2016
- [j1]Hanwool Jeong, Juhyun Park, Tae Woo Oh, Woojin Rim, Taejoong Song, Gyu-Hong Kim, Hyo-Sig Won, Seong-Ook Jung:
Bitline Precharging and Preamplifying Switching pMOS for High-Speed Low-Power SRAM. IEEE Trans. Circuits Syst. II Express Briefs 63-II(11): 1059-1063 (2016)
Coauthor Index
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