"Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With ..."

Younghwi Yang et al. (2015)

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DOI: 10.1109/TVLSI.2014.2367234

access: closed

type: Journal Article

metadata version: 2020-03-11

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Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 23(11): 2748-2752 (2015)

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