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2020 – today
- 2024
[j9]Thiago Santos Copetti
, Moritz Fieback, Tobias Gemmeke, Said Hamdioui, Letícia Maria Veiras Bolzani Poehls:
A DfT Strategy for Guaranteeing ReRAM's Quality after Manufacturing. J. Electron. Test. 40(2): 245-257 (2024)- [c21]Thiago Copetti, A. Chordia, Moritz Fieback, Mottaqiallah Taouil, Said Hamdioui, Letícia Maria Veiras Bolzani:
Analyzing the Use of Temperature to Facilitate Fault Propagation in ReRAMs. LATS 2024: 1-6 - 2023
- [c20]Hanzhi Xun, Moritz Fieback, Sicong Yuan, Hassen Aziza, Mathijs Heidekamp, Thiago Copetti, Letícia Maria Veiras Bolzani Poehls, Mottaqiallah Taouil, Said Hamdioui:
Characterization and Test of Intermittent Over RESET in RRAMs. ATS 2023: 1-6 - [c19]Thiago Santos Copetti, A. Castelnuovo, Tobias Gemmeke, Letícia Maria Veiras Bolzani:
Evaluating a New RRAM Manufacturing Test Strategy. LATS 2023: 1-6 - 2022
- [c18]Thiago Santos Copetti, M. Nilovic, Moritz Fieback, Tobias Gemmeke, Said Hamdioui, Letícia Maria Bolzani Poehls:
Exploring an On-Chip Sensor to Detect Unique Faults in RRAMs. LATS 2022: 1-6 - 2021
- [j8]Thiago Copetti, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Said Hamdioui, Letícia Maria Bolzani Poehls, Tiago Roberto Balen:
Evaluation of Single Event Upset Susceptibility of FinFET-based SRAMs with Weak Resistive Defects. J. Electron. Test. 37(3): 383-394 (2021) - [j7]Letícia Maria Veiras Bolzani, Moritz Fieback, Susanne Hoffmann-Eifert, Thiago Copetti, E. Brum, Stephan Menzel, Said Hamdioui, Tobias Gemmeke:
Review of Manufacturing Process Defects and Their Effects on Memristive Devices. J. Electron. Test. 37(4): 427-437 (2021) - [c17]G. Cardoso Medeiros, Moritz Fieback, Thiago Santos Copetti, Anteneh Gebregiorgis, Mottaqiallah Taouil, Leticia B. Poehls, Said Hamdioui:
Improving the Detection of Undefined State Faults in FinFET SRAMs. DTIS 2021: 1-6 - [c16]E. Brum, Moritz Fieback, Thiago Santos Copetti, H. Jiayi, Said Hamdioui, Fabian Vargas, Letícia Maria Veiras Bolzani:
Evaluating the Impact of Process Variation on RRAMs. LATS 2021: 1-6 - [c15]Thiago Santos Copetti, Tobias Gemmeke, Letícia Maria Veiras Bolzani:
Validating a DFT Strategy's Detection Capability regarding Emerging Faults in RRAMs. VLSI-SoC 2021: 1-6 - [c14]Thiago Santos Copetti, Tobias Gemmeke, Letícia Maria Bolzani Pöhls:
A DfT Strategy for Detecting Emerging Faults in RRAMs. VLSI-SoC (Selected Papers) 2021: 93-111 - 2020
- [j6]Thiago Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls:
Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects. J. Electron. Test. 36(2): 271-284 (2020) - [c13]Thiago Copetti, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Said Hamdioui, Leticia Bolzani Poehls, Tiago R. Balen:
Evaluating the Impact of Ionizing Particles on FinFET -based SRAMs with Weak Resistive Defects. LATS 2020: 1-6
2010 – 2019
- 2019
- [j5]G. Cardoso Medeiros, E. Brum, Leticia Bolzani Poehls, Thiago Copetti, Tiago R. Balen:
Evaluating the Impact of Temperature on Dynamic Fault Behaviour of FinFET-Based SRAMs with Resistive Defects. J. Electron. Test. 35(2): 191-200 (2019) - [c12]Thiago Santos Copetti, Tiago R. Balen, E. Brum, C. Aquistapace, Leticia Bolzani Poehls:
A Comparative Study Between FinFET and CMOS-Based SRAMs under Resistive Defects. LATS 2019: 1-6 - 2018
- [c11]G. Cardoso Medeiros, E. Brum, Leticia Bolzani Poehls, Thiago Copetti, Tiago R. Balen:
Influence of temperature on dynamic fault behavior due to resistive defects in FinFET-based SRAMs. LATS 2018: 1-6 - 2017
- [j4]M. Tulio Martins, G. Cardoso Medeiros, Thiago Copetti, Fabian Vargas, Marcus Pohls:
Analysing NBTI Impact on SRAMs with Resistive Defects. J. Electron. Test. 33(5): 637-655 (2017) - [c10]Thiago Santos Copetti, Tiago R. Balen, Guilherme Cardoso Medeiros, Letícia Maria Bolzani Poehls:
Analyzing the behavior of FinFET SRAMs with resistive defects. VLSI-SoC 2017: 1-6 - [c9]Thiago Santos Copetti, Guilherme Cardoso Medeiros, Letícia Maria Bolzani Poehls, Tiago R. Balen:
Evaluating the Impact of Resistive Defects on FinFET-Based SRAMs. VLSI-SoC (Selected Papers) 2017: 22-45 - 2016
- [j3]Maksim Jenihhin, Giovanni Squillero, Thiago Santos Copetti, Valentin Tihhomirov, Sergei Kostin, Marco Gaudesi, Fabian Vargas, Jaan Raik, Matteo Sonza Reorda, Leticia Bolzani Poehls, Raimund Ubar, Guilherme Cardoso Medeiros:
Identification and Rejuvenation of NBTI-Critical Logic Paths in Nanoscale Circuits. J. Electron. Test. 32(3): 273-289 (2016) - [j2]Thiago Copetti, Guilherme Cardoso Medeiros, Leticia Bolzani Poehls, Fabian Vargas:
NBTI-Aware Design of Integrated Circuits: A Hardware-Based Approach for Increasing Circuits' Life Time. J. Electron. Test. 32(3): 315-328 (2016) - [c8]Thiago Copetti, Guilherme Medeiros Machado, Leticia Bolzani Poehls, Fabian Vargas, Sergei Kostin, Maksim Jenihhin, Jaan Raik, Raimund Ubar:
Gate-level modelling of NBTI-induced delays under process variations. LATS 2016: 75-80 - [c7]M. Tulio Martins, G. Cardoso Medeiros, Thiago Copetti, Fabian Vargas, Letícia Maria Bolzani Poehls:
Analyzing NBTI impact on SRAMs with resistive-open defects. LATS 2016: 87-92 - 2015
- [c6]Sergei Kostin, Jaan Raik, Raimund Ubar, Maksim Jenihhin, Thiago Copetti, Fabian Vargas, Letícia Maria Bolzani Pöhls:
SPICE-Inspired Fast Gate-Level Computation of NBTI-induced Delays in Nanoscale Logic. DDECS 2015: 223-228 - [c5]Thiago Copetti, G. Cardoso Medeiros, Letícia Maria Bolzani Poehls, Fabian Vargas:
NBTI-aware design of integrated circuits: a hardware-based approach. LATS 2015: 1-6 - [c4]N. Palermo, Valentin Tihhomirov, Thiago Santos Copetti, Maksim Jenihhin, Jaan Raik, Sergei Kostin, Marco Gaudesi, Giovanni Squillero, Matteo Sonza Reorda, Fabian Vargas, Letícia Maria Bolzani Pöhls:
Rejuvenation of nanoscale logic at NBTI-critical paths using evolutionary TPG. LATS 2015: 1-6 - 2014
- [j1]Arthur Ceratti, Thiago Copetti, Letícia Maria Bolzani Poehls, Fabian Vargas, Rubem Dutra Ribeiro Fagundes:
An On-Chip Sensor to Monitor NBTI Effects in SRAMs. J. Electron. Test. 30(2): 159-169 (2014) - [c3]Sergei Kostin, Jaan Raik, Raimund Ubar, Maksim Jenihhin, Fabian Vargas, Letícia Maria Bolzani Poehls, Thiago Santos Copetti:
Hierarchical identification of NBTI-critical gates in nanoscale logic. LATW 2014: 1-6 - 2012
- [c2]Arthur Ceratti, Thiago Copetti, Letícia Maria Bolzani Poehls, Fabian Vargas:
On-chip aging sensor to monitor NBTI effect in nano-scale SRAM. DDECS 2012: 354-359 - [c1]Arthur Ceratti, Thiago Copetti, Letícia Maria Veiras Bolzani, Fabian Vargas:
Investigating the use of an on-chip sensor to monitor NBTI effect in SRAM. LATW 2012: 1-6
Coauthor Index
aka: Letícia Maria Veiras Bolzani Poehls
aka: Letícia Maria Bolzani Poehls
aka: Letícia Maria Bolzani Pöhls
aka: Leticia B. Poehls
aka: Leticia Bolzani Poehls
aka: Guilherme Cardoso Medeiros
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last updated on 2024-08-05 21:22 CEST by the dblp team
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