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Martin Streibl
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2000 – 2009
- 2007
- [j6]Wolfgang Soldner, Martin Streibl, U. Hodel, Marc Tiebout, Harald Gossner, Doris Schmitt-Landsiedel, Jung-Hoon Chun, Choshu Ito, Robert W. Dutton:
RF ESD protection strategies: Codesign vs. low-C protection. Microelectron. Reliab. 47(7): 1008-1015 (2007) - [j5]Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Domanski, Mauro Ciappa, Wolfgang Fichtner:
SCR operation mode of diode strings for ESD protection. Microelectron. Reliab. 47(7): 1044-1053 (2007) - [c3]Zheng Gu, Peter Gregorius, Daniel Kehrer, Lydia Neumann, Evelyn Neuscheler, Thomas Rickes, Hermann Ruckerbauer, Ralf Schledz, Martin Streibl, Jürgen Zielbauer:
Cascading Techniques for a High-Speed Memory Interface. ISSCC 2007: 234-599 - [c2]Wolfgang Soldner, Moon-Jung Kim, Martin Streibl, Harald Gossner, Thomas H. Lee, Doris Schmitt-Landsiedel:
A 10GHz Broadband Amplifier with Bootstrapped 2kV ESD Protection. ISSCC 2007: 550-551 - 2005
- [j4]S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser, Heinrich Wolf, Waclaw Bala:
Transient latch-up: experimental analysis and device simulation. Microelectron. Reliab. 45(2): 297-304 (2005) - [j3]Martin Streibl, Franz Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis. Microelectron. Reliab. 45(2): 313-321 (2005) - [c1]Raffaele Salerno, Marc Tiebout, Hermann Paule, Martin Streibl, Christoph Sandner, Klaus Kropf:
ESD-protected CMOS 3-5 GHz wideband LNA+PGA design for UWB. ESSCIRC 2005: 219-222 - 2003
- [j2]Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner:
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. Microelectron. Reliab. 43(7): 1001-1010 (2003) - 2002
- [j1]Wolfgang Stadler, Kai Esmark, Harald Gossner, Martin Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, Erich Gornik:
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. 42(9-11): 1267-1274 (2002)
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