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ORCIDMuhammad Ashraful Alam
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- affiliation: Purdue University, West Lafayette, IN, USA
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2020 – today
- 2024
[c24]S. Chandra Mouli, Muhammad Ashraful Alam, Bruno Ribeiro:
MetaPhysiCa: Improving OOD Robustness in Physics-informed Machine Learning. ICLR 2024- [c23]Amandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam:
Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor Manufacturing. IRPS 2024: 1-4 - [c22]Md. Asaduz Zaman Mamun, Nathan J. Conrad, Saeed Mohammadi, Muhammad Ashraful Alam:
Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer Approach. IRPS 2024: 1-8 - [i6]Jabir Bin Jahangir, Muhammad Ashraful Alam:
Physics-guided machine learning predicts the planet-scale performance of solar farms with sparse, heterogeneous, public data. CoRR abs/2407.18284 (2024) - 2023
- [j15]Nicolò Zagni
, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam:
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges. Proc. IEEE 111(2): 158-184 (2023) - [c21]Md. Asaduz Zaman Mamun, Amar Mavinkurve, Michiel van Soestbergen, Muhammad Ashraful Alam:
Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical Failures. IRPS 2023: 1-7 - [c20]Sruthi M. P, Md. Asaduz Zaman Mamun, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta, Muhammad Ashraful Alam:
Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified. IRPS 2023: 1-6 - [c19]Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye:
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. VLSI Technology and Circuits 2023: 1-2 - [i5]S. Chandra Mouli, Muhammad Ashraful Alam, Bruno Ribeiro:
MetaPhysiCa: OOD Robustness in Physics-informed Machine Learning. CoRR abs/2303.03181 (2023) - 2022
- [b1]Muhammad Ashraful Alam, M. Ryyan Khan:
Principles of Solar Cells - Connecting Perspectives on Device, System, Reliability, and Data Science. WorldScientific 2022, ISBN 9789811231537, pp. 1-540 - [j14]Jabir Bin Jahangir, Md. Al-Mahmud, Md. Shahadat Sarker Shakir, Anisul Haque, Muhammad Ashraful Alam, M. Ryyan Khan:
A Critical Analysis of Bifacial Solar Farm Configurations: Theory and Experiments. IEEE Access 10: 47726-47740 (2022) - [j13]Xin Jin, Ajanta Saha, Hongjie Jiang, Muhammed Ramazan Oduncu, Qingyu Yang, Sotoudeh Sedaghat, Kerry Maize, Jan P. Allebach, Ali Shakouri, Nicholas Glassmaker, Alexander Wei, Rahim Rahimi, Muhammad Ashraful Alam:
Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical Sensing. IEEE Trans. Biomed. Eng. 69(1): 96-107 (2022) - [j12]Vivek Dixit, Raja Selvarajan, Tamer Aldwairi, Yaroslav Koshka, Mark A. Novotny, Travis S. Humble, Muhammad Ashraful Alam, Sabre Kais:
Training a Quantum Annealing Based Restricted Boltzmann Machine on Cybersecurity Data. IEEE Trans. Emerg. Top. Comput. Intell. 6(3): 417-428 (2022) - [c18]Md. Asaduz Zaman Mamun, Muhammad Ashraful Alam:
Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation Generalized. IRPS 2022: 8 - [c17]Bikram Kishore Mahajan, Yen-Pu Chen, Muhammad Ashraful Alam, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy:
A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors. IRPS 2022: 10 - [c16]Bikram Kishore Mahajan, Yen-Pu Chen, Ulisses Alberto Heredia Rivera, Rahim Rahimi, Muhammad Ashraful Alam:
Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors. IRPS 2022: 52-1 - [i4]Habeel Alam, Muhammad Ashraful Alam, Nauman Zafar Butt:
Techno Economic Modeling for Agrivoltaics: Can Agrivoltaics be more profitable than Ground mounted PV? CoRR abs/2206.05964 (2022) - 2021
- [c15]Bikram Kishore Mahajan, Yen-Pu Chen, Dhanoop Varghese, Vijay Reddy, Srikanth Krishnan, Muhammad Ashraful Alam:
Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique. IRPS 2021: 1-6 - 2020
- [j11]Xin Jin, Muhammad Ashraful Alam:
Generalized Modeling Framework of Metal Oxide-Based Non-Enzymatic Glucose Sensors: Concepts, Methods, and Challenges. IEEE Trans. Biomed. Eng. 67(3): 679-687 (2020) - [c14]Yen-Pu Chen, Bikram Kishore Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam:
A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors. IRPS 2020: 1-6 - [i3]Somali Chaterji, Parinaz Naghizadeh, Muhammad Ashraful Alam, Saurabh Bagchi, Mung Chiang, David Corman, Brian J. Henz, Suman Jana, Na Li, Shaoshuai Mou, Meeko Oishi, Chunyi Peng, Tiark Rompf, Ashutosh Sabharwal, Shreyas Sundaram, James Weimer, Jennifer Weller:
Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap. CoRR abs/2001.00090 (2020) - [i2]Vivek Dixit, Raja Selvarajan, Muhammad Ashraful Alam, Travis S. Humble, Sabre Kais:
Training and Classification using a Restricted Boltzmann Machine on the D-Wave 2000Q. CoRR abs/2005.03247 (2020) - [i1]Vivek Dixit, Raja Selvarajan, Muhammad Ashraful Alam, Travis S. Humble, Sabre Kais:
Training a quantum annealing based restricted Boltzmann machine on cybersecurity data. CoRR abs/2011.13996 (2020)
2010 – 2019
- 2019
- [c13]Woojin Ahn, Yen-Pu Chen, Muhammad Ashraful Alam:
An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies. IRPS 2019: 1-6 - 2018
- [j10]Woojin Ahn, Sang Hoon Shin, Chunsheng Jiang, Hai Jiang, M. A. Wahab, Muhammad Ashraful Alam:
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits. Microelectron. Reliab. 81: 262-273 (2018) - [c12]Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad Ashraful Alam:
BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs. IRPS 2018: 6 - [c11]SangHoon Shin, Yen-Pu Chen, Woojin Ahn, Honglin Guo, Byron Williams, Jeff West, Tom Bonifield, Dhanoop Varghese, Srikanth Krishnan, Muhammad Ashraful Alam:
High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics. IRPS 2018: 9-1 - 2015
- [j9]Muhammad Ashraful Alam, Oguz H. Elibol, Anisul Haque:
Editorial IEEE Access Special Section Editorial: Nanobiosensors. IEEE Access 3: 1477-1479 (2015) - [c10]Muhammad Ashraful Alam, Piyush Dak, Muhammad A. Wahab, Xingshu Sun:
Physics-based compact models for insulated-gate field-effect biosensors, landau-transistors, and thin-film solar cells. CICC 2015: 1-8 - [c9]Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye:
Characterization and reliability of III-V gate-all-around MOSFETs. IRPS 2015: 4 - 2014
- [j8]Dhanoop Varghese, V. Reddy, S. Krishnan, Muhammad Ashraful Alam:
OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review. Microelectron. Reliab. 54(8): 1477-1488 (2014) - 2011
- [j7]Muhammad Ashraful Alam, Masud Hasan:
Computing Nice Projections of Convex Polyhedra. Int. J. Comput. Geom. Appl. 21(1): 71-85 (2011)
2000 – 2009
- 2008
- [j6]Muhammad Ashraful Alam:
Reliability- and process-variation aware design of integrated circuits. Microelectron. Reliab. 48(8-9): 1114-1122 (2008) - [c8]Muhammad Ashraful Alam, Masud Hasan:
Computing Nice Projections of Convex Polyhedra. WALCOM 2008: 111-119 - 2007
- [j5]Muhammad Ashraful Alam, Haldun Kufluoglu, Dhanoop Varghese, S. Mahapatra:
A comprehensive model for PMOS NBTI degradation: Recent progress. Microelectron. Reliab. 47(6): 853-862 (2007) - [j4]Bipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy:
Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26(4): 743-751 (2007) - [j3]Kunhyuk Kang, Haldun Kufluoglu, Kaushik Roy, Muhammad Ashraful Alam:
Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26(10): 1770-1781 (2007) - [c7]Kunhyuk Kang, Keejong Kim, Ahmad E. Islam, Muhammad Ashraful Alam, Kaushik Roy:
Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement. DAC 2007: 358-363 - [c6]Kunhyuk Kang, Sang Phill Park, Kaushik Roy, Muhammad Ashraful Alam:
Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance. ICCAD 2007: 730-734 - [c5]Kunhyuk Kang, Muhammad Ashraful Alam, Kaushik Roy:
Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ. ITC 2007: 1-10 - 2006
- [c4]Bipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy:
Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuits. DATE 2006: 780-785 - [c3]Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy:
Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI. ICCD 2006: 216-221 - 2005
- [j2]Muhammad Ashraful Alam, S. Mahapatra:
A comprehensive model of PMOS NBTI degradation. Microelectron. Reliab. 45(1): 71-81 (2005) - [j1]Bonnie E. Weir, Che-Choi Leung, Paul J. Silverman, Muhammad Ashraful Alam:
Gate dielectric breakdown in the time-scale of ESD events. Microelectron. Reliab. 45(3-4): 427-436 (2005) - 2004
- [c2]Muhammad Ashraful Alam:
Software Security in Bangladesh with .NET Framework: A Roadmap. ITCC (2) 2004: 438-443 - 2001
- [c1]Simona Donati Guerrieri, Fabrizio Bonani, Giovanni Ghione, Muhammad Ashraful Alam:
A new analytical model for high frequency MOSFET noise. CICC 2001: 389-392
Coauthor Index
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last updated on 2024-08-25 20:08 CEST by the dblp team
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