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Islam A. K. M. Mahfuzul
Person information
- affiliation: Kyoto University, Department of Electrical Engineering, Graduate School of Engineering, Japan
Other persons with the same name
- Mahfuzul Islam — disambiguation page
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Books and Theses
- 2014
- [b1]Islam A. K. M. Mahfuzul:
Modeling, Characterization and Compensation of Performance Variability using On-chip Monitor Circuits for Energy-efficient LSI. Kyoto University, Japan, 2014
Journal Articles
- 2024
- [j9]Takehiro Kitamura, Takashi Hisakado, Osami Wada, Mahfuzul Islam:
Design of Reference-free Flash ADC With On-chip Rank-based Comparator Selection Using Multiple Comparator Groups. IPSJ Trans. Syst. LSI Des. Methodol. 17: 36-43 (2024) - 2022
- [j8]Takehiro Kitamura, Mahfuzul Islam, Takashi Hisakado, Osami Wada:
Order Statistics Based Low-Power Flash ADC with On-Chip Comparator Selection. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 105-A(11): 1450-1457 (2022) - [j7]Shun Yamaguchi, Mahfuzul Islam, Takashi Hisakado, Osami Wada:
Low-Power Design of Digital LDO With Nonlinear Symmetric Frequency Generation. IEEE Trans. Circuits Syst. II Express Briefs 69(12): 4644-4648 (2022) - 2019
- [j6]A. K. M. Mahfuzul Islam, Hidetoshi Onodera:
Circuit Techniques for Device-Circuit Interaction toward Minimum Energy Operation. IPSJ Trans. Syst. LSI Des. Methodol. 12: 2-12 (2019) - [j5]Teruki Someya, A. K. M. Mahfuzul Islam, Takayasu Sakurai, Makoto Takamiya:
An 11-nW CMOS Temperature-to-Digital Converter Utilizing Sub-Threshold Current at Sub-Thermal Drain Voltage. IEEE J. Solid State Circuits 54(3): 613-622 (2019) - 2018
- [j4]Swapnil Sayan Saha, Shafizur Rahman, Miftahul Jannat Rasna, Tarek Bin Zahid, A. K. M. Mahfuzul Islam, Md. Atiqur Rahman Ahad:
Feature Extraction, Performance Analysis and System Design Using the DU Mobility Dataset. IEEE Access 6: 44776-44786 (2018) - 2017
- [j3]Islam A. K. M. Mahfuzul, Masamune Hamamatsu, Tomoyuki Yokota, Sunghoon Lee, Wakako Yukita, Makoto Takamiya, Takao Someya, Takayasu Sakurai:
Programmable Neuron Array Based on a 2-Transistor Multiplier Using Organic Floating-Gate for Intelligent Sensors. IEEE J. Emerg. Sel. Topics Circuits Syst. 7(1): 81-91 (2017) - 2015
- [j2]Islam A. K. M. Mahfuzul, Jun Shiomi, Tohru Ishihara, Hidetoshi Onodera:
Wide-Supply-Range All-Digital Leakage Variation Sensor for On-Chip Process and Temperature Monitoring. IEEE J. Solid State Circuits 50(11): 2475-2490 (2015) - 2013
- [j1]Islam A. K. M. Mahfuzul, Hidetoshi Onodera:
On-Chip Detection of Process Shift and Process Spread for Post-Silicon Diagnosis and Model-Hardware Correlation. IEICE Trans. Inf. Syst. 96-D(9): 1971-1979 (2013)
Conference and Workshop Papers
- 2023
- [c21]Shun Yamaguchi, Mahfuzul Islam, Takashi Hisakado, Osami Wada:
A Fully Synchronous Digital LDO with Built-in Adaptive Frequency Modulation and Implicit Dead-Zone Control. ASP-DAC 2023: 186-187 - [c20]Mahfuzul Islam, Takehiro Kitamura, Takashi Hisakado, Osami Wada:
Demonstration of Order Statistics Based Flash ADC in a 65nm Process. ASP-DAC 2023: 188-189 - [c19]Shun Yamaguchi, Takashi Hisakado, Osami Wada, Mahfuzul Islam:
An Adaptive-Sampling Digital LDO with Statistical Comparator Selection Achieving 99.99% Maximum Current Efficiency and 0.25ps FoM in 65nm. A-SSCC 2023: 1-3 - [c18]Mahfuzul Islam, Shogo Harada, Takashi Hisakado, Osami Wada:
CMOS Temperature Sensor Utilizing Gate-length-based Threshold Voltage Modulation. NEWCAS 2023: 1-5 - 2022
- [c17]Takehiro Kitamura, Mahfuzul Islam, Takashi Hisakado, Osami Wada:
Performance Improvement of Order Statistics Based Flash ADC Using Multiple Comparator Groups. NEWCAS 2022: 1-4 - 2021
- [c16]Shogo Harada, Mahfuzul Islam, Takashi Hisakado, Osami Wada:
A process scalable voltage-reference-free temperature sensor utilizing MOSFET threshold voltage variation. A-SSCC 2021: 1-3 - [c15]Kensuke Murakami, Mahfuzul Islam, Hidetoshi Onodera:
CDF Distance Based Statistical Parameter Extraction Using Nonlinear Delay Variation Models. IOLTS 2021: 1-6 - [c14]Takehiro Kitamura, Mahfuzul Islam, Takashi Hisakado, Osami Wada:
Flash ADC Utilizing Offset Voltage Variation With Order Statistics Based Comparator Selection. ISQED 2021: 103-108 - 2019
- [c13]Koutaro Miyazaki, Yang Lo, A. K. M. Mahfuzul Islam, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai:
CNN-based Approach for Estimating Degradation of Power Devices by Gate Waveform Monitoring. ICICDT 2019: 1-4 - [c12]A. K. M. Mahfuzul Islam, Ryota Shimizu, Hidetoshi Onodera:
Analysis of Random Telegraph Noise (RTN) at Near-Threshold Operation by Measuring 154k Ring Oscillators. IRPS 2019: 1-6 - [c11]A. K. M. Mahfuzul Islam, Shinichi Nishizawa, Yusuke Matsui, Yoshinobu Ichida:
Drive-Strength Selection for Synthesis of Leakage-Dominant Circuits. ISQED 2019: 298-303 - 2018
- [c10]Teruki Someya, Islam A. K. M. Mahfuzul, Takayasu Sakurai, Makoto Takamiya:
A 13nW temperature-to-digital converter utilizing sub-threshold MOSFET operation at sub-thermal drain voltage. CICC 2018: 1-4 - [c9]A. K. M. Mahfuzul Islam, Hidetoshi Onodera:
PVT2: process, voltage, temperature and time-dependent variability in scaled CMOS process. ICCAD 2018: 126 - [c8]A. K. M. Mahfuzul Islam, Hidetoshi Onodera:
Worst-Case Performance Analysis Under Random Telegraph Noise Induced Threshold Voltage Variability. PATMOS 2018: 140-146 - 2017
- [c7]Islam A. K. M. Mahfuzul, Hidetoshi Onodera:
Effect of supply voltage on random telegraph noise of transistors under switching condition. PATMOS 2017: 1-8 - 2016
- [c6]Islam A. K. M. Mahfuzul, Hidetoshi Onodera:
On-chip monitoring and compensation scheme with fine-grain body biasing for robust and energy-efficient operations. ASP-DAC 2016: 403-409 - 2015
- [c5]Norihiro Kamae, Islam A. K. M. Mahfuzul, Akira Tsuchiya, Tohru Ishihara, Hidetoshi Onodera:
Energy reduction by built-in body biasing with single supply voltage operation. ISQED 2015: 181-185 - 2014
- [c4]Islam A. K. M. Mahfuzul, Jun Shiomi, Tohru Ishihara, Hidetoshi Onodera:
Wide-supply-range all-digital leakage variation sensor for on-chip process and temperature monitoring. A-SSCC 2014: 45-48 - [c3]Norihiro Kamae, Islam A. K. M. Mahfuzul, Akira Tsuchiya, Hidetoshi Onodera:
A body bias generator with wide supply-range down to threshold voltage for within-die variability compensation. A-SSCC 2014: 53-56 - [c2]Islam A. K. M. Mahfuzul, Hidetoshi Onodera:
Characterization and compensation of performance variability using on-chip monitors. VLSI-DAT 2014: 1-4 - 2012
- [c1]Islam A. K. M. Mahfuzul, Hidetoshi Onodera:
On-Chip Detection of Process Shift and Process Spread for Silicon Debugging and Model-Hardware Correlation. Asian Test Symposium 2012: 350-354
Coauthor Index
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